The development of new materials and devices for flexible electronics depends crucially on the understanding of how strain affects electronic material properties at the nano-scale. Scanning Kelvin-Probe Microscopy (SKPM) is a unique technique for nanoelectronic investigations as it combines non-invasive measurement of surface topography and surface electrical potential. Here we show that SKPM i...

Full Adder is one of the critical parts of logical and arithmetic units. So, presenting a low power full adder cell reduces the power consumption of the entire circuit. Also, using Nano-scale transistors, because of their unique characteristics will save energy consumption and decrease the chip area. In this paper we presented a low power full adder cell by using carbon nanotube field effect tr...

•Several materials have been investigated for use in nano-CMOS technology, such as ZrO2, TiO2, BST, HfO2, Al2O3, SiON, and Si3N4. •Intel has recently prototyped a processor called Penryn using such transistors of 45nm technology. •For compact modeling based study of high-K non-classical transistors using BSIM4/5, two possible options can be considered: (i) varying the model parameter in the mod...

New anthraquinone derivatives were prepared and used as active layers of organic field-effect transistors (OFETs); these devices showed good n-type characteristics and the quinones were found to be useful for organic semiconductors in OFETs.

The steady reduction in the dimension of transistors, according to Moore's law has been the main force behind the regular leaps in the level of performance of the silicon ICs. Due to the effects like the short channel effects, tunnelling effect, additional heat dissipation, interconnect problems etc problems arise. So it is not possible to reduce the size further. Hence now it is necessary to a...

This paper presents examples of inkjet printing applications for organic electronics. Two applications developed are presented in detail: organic thin-film transistors fabricated on biocellulose and electrodes for electromyography deposited on

To identify the failure cause of embedded memory cells e.g. SRAM with 6 transistors it is often necessary to measure the electrical parameters of each transistor. Until now, on integrated circuits with small feature size and pitch, this was only possible using FIB probing pads or SEM probers, but both methods are complex and error-prone. Today Atomic Force Probing (AFP) provides a powerful alte...