In this paper, we report the effect of luminous behaviour of transparent gate Recessed Channel MOSFET (RC-MOSFET).Aggressive scaling is associated with a number of higher order effects such as short channel effects, hot carrier effects and heating effect which significantly affect the device performance. The Ray trace method in MOSFET has emerged to be the ultimate solution. The proposed device...

We report the integration of a MOSFET with a field emission arrays to obtain low voltage switching and more stable emission in field emission devices. Instead of the traditional feedback resistor stabilization in the emitter circuit, a MOSFET is used as a voltage controlled current source thereby stabilizing the emission current and resulting in low voltage switching. In this device, the emitte...

Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant MOSFET topology that encompasses discrete MOS power switches and CMOS. By contrast, the depletion-mode MOSFET has not received the same attention or popular...

The characteristics of a typical 70nm high K gate dielectrics MOSFET with different source/drain structure including S/D lift-up structure are simulated by two dimensional device simulator. The impact of FIBL effect the gate dielectric permikttivity increasing to the characteristics of MOSFET is investigated. The simulation results shows that the degradation of MOSFET characteristics can be sup...

For low power circuits downscaling of MOSFET has a major issue of scaling of voltage which has ceased after 1V. This paper highlights comparative study and analysis of pocket double gate tunnel FET (DGTFET) with MOSFET for low standby power logic circuits. The leakage current of pocket DGTFET and MOSFET have been studied and the analysis results shows that the pocket DGTFET gives the lower leak...

Lowering both the threshold voltage (Vth) and subthreshold swing (S) at the same time is essentially required for O.1pm and below O.lym MOSFETs with low supply voltage. In this paper, we discuss a temperature scaling concept of MOSFET and the device characteristics of the fabricated 77K MOSFETs. In the temperature scaling concept, the physical quantities relating to potential are scaled with op...

In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...

The charge/discharge phenomenon of capacitance between terminals in a power MOSFET affects on its switching behavior of the device. The input capacitance is composed of the gate-source capacitance CGS and the gate-drain capacitance CGD, which vary with gate voltage VGS. This paper characterizes the relationship between the input capacitance of a SiC MOSFET and the gate voltage with considering ...

This article presents some design guidelines for the RCD snubber of flyback converters. When the MOSFET turns off, a high-voltage spike occurs on the drain pin because of a resonance between the leakage inductor (Llk) of the main transformer and the output capacitor (COSS) of the MOSFET. The excessive voltage on the drain pin may lead to an avalanche breakdown and eventually damage the MOSFET. ...