Uniform sampling in metrology has known drawbacks such as coherent spectral aliasing and a lack of efficiency in terms of measuring time and data storage. The requirement for intelligent sampling strategies has been outlined over recent years, particularly where the measurement of structured surfaces is concerned. Most of the present research on intelligent sampling has focused on dimensional m...

A novel cable-based metrology system is presented wherein six cables are connected in parallel from ground-mounted string pots to the moving object or tool of interest. Cartesian pose can be determined for feedback control and other purposes by reading the lengths of the six cables via the string pots and using closed-form forward pose kinematics. This article focuses on a sculpting metrology t...

Quantum states of light, such as squeezed states or entangled states, can be used to make measurements (metrology), produce images, and sense objects with a precision that far exceeds what is possible classically, and also exceeds what was once thought to be possible quantum mechanically. The primary idea is to exploit quantum effects to beat the shot-noise limit in metrology and the Rayleigh d...

The compensation of LTI systems and the evaluation of the according uncertainty is of growing interest in metrology. Uncertainty evaluation in metrology ought to follow specific guidelines, and recently two corresponding uncertainty evaluation schemes have been proposed for FIR and IIR filtering. We employ these schemes to compare an FIR and an IIR approach for compensating a second-order LTI s...

A survey has been performed to determine the measurement requirements of space power related parameters for anticipated SDI systems. These requirements have been compared to present state-of-the-art metrology capabilities as represented by the calibration capabilities of the National Institute of Standards and Technology. Metrology areas where present state-of-the-art capabilities are inadequat...

This paper presents an overview of foundational concepts and techniques used in metrology of form errors such as straightness, flatness, circularity, sphericity, and cylindricity. While there exists a significant body of literature on form-error metrology, to the best of our knowledge, no review paper has been written on this topic. Our aim here is to (i) present a unified view of the mathemati...

A statistical metrology framework is used to identify systematic and random sources of interconnect structure (ILD thickness) variation. Electrical and physical measurements, TCAD simulations, design of experiments, signal processing, and statistical analysis are integrated via statistical metrology to deconvolve ILD thickness variation into constituent variation sources. In this way, insight i...

65 nm and 45 nm silicon devices will utilize compositionally critical processes for gate dielectrics, capacitor dielectrics, gate and capacitor electrodes, and ultra shallow junction layers. For example, small changes in nitrogen composition have been correlated with unacceptable shifts in electrical properties of devices with SiOxNy gate dielectrics. Present optically-based metrology technolog...

Using combined AFM (Atomic Force Microscope) and a SEM (Scanning Electron Microscope) makes it possible to accurately measure a nano-object in 3 dimensions. This paper deals with the traceable measurements of the size and the size distribution of a SiO2 sphericalshaped nanoparticle population performed by both microscopy techniques. The complementary nature of AFM and SEM is investigated. The c...