The Full Adders (FAs) constitute the essential elements of digital systems, in a sense that they affect the circuit parameters of such systems. With respect to the MOSFET restrictions, its replacement by new devices and technologies is inevitable. QCA is one of the accomplishments in nanotechnology nominated as the candidate for MOSFET replacement. In this article 4 new layouts are presente...

The ordering of quantum dots in three-dimensional quantum dot lattices is investigated by grazing-incidence small-angle X-ray scattering (GISAXS). Theoretical models describing GISAXS intensity distributions for three general classes of lattices of quantum dots are proposed. The classes differ in the type of disorder of the positions of the quantum dots. The models enable full structure determi...

three different nanostructured semiconductor lasers were studied – the quantum dot passively mode-locked laser, the dual-mode quantum dot laser and the optically-injected quantum dot distributed feedback laser. The key milestones achieved were: 1) the use of optical feedback to reduce the timing jitter of the pulsed lasers from 295 fs/cycle to 32 fs/cycle, 2) experimental determination of the o...

We demonstrated fine emission wavelength tuning of quantum dot (QD) fluorescence by fine structural control of optical metamaterials with Fano resonance. An asymmetric-double-bar (ADB), which was composed of only two bars with slightly different bar lengths, was used to obtain Fano resonance in the optical region. By changing the short bar length of ADB structures with high dimensional accuracy...

We use a vertical double quantum dot (QD) to study spin blockade (SB) for the twoto five-electron states. SB observed for the twoand four-electron states is both assigned to Pauli exclusion with formation of a spin triplet state, and lifted by singlet-triplet admixing due to fluctuating nuclear field. SB observed for the five-electron state is caused by combined Pauli effect and Hund’s rule. We...

A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot in an InAs nanowire. The quantum dot is strongly coupled to the underlying point contact that is used as a charge detector. The addition of one electron to ...

Strong radial confinement in semiconductor nanowires leads to modified electronic and phononic energy spectra. We analyze the current response to the interplay between quantum confinement effects of the electron and phonon systems in a gate-defined double quantum dot in a semiconductor nanowire. We show that current spectroscopy of inelastic transitions between the two quantum dots can be used ...

Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum by Krenner et al (2005) Phys. Rev. Lett. 94 057402 is quantitatively reproduced, and the correct energy states are identified based on a previously validated atomistic tight binding mo...