Related Articles Correlating stress generation and sheet resistance in InAlN/GaN nanoribbon high electron mobility transistors Appl. Phys. Lett. 101, 113101 (2012) Nonmagnetic spin-field-effect transistor Appl. Phys. Lett. 101, 082407 (2012) Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon Appl. Phys. Lett. 100, 213107 (2012) Threshold voltage modulation mechan...

The tetratopic ligand tetrathiafulvalene-tetrabenzoate (H4TTFTB) is used to synthesize Zn2(TTFTB), a new metal-organic framework that contains columnar stacks of tetrathiafulvalene and benzoate-lined infinite one-dimensional channels. The new MOF remains porous upon desolvation and exhibits charge mobility commensurate with some of the best organic semiconductors, confirmed by flash-photolysis-...

As a result of the Manhattan Project and the Cold War, it has been estimated that over 1 billion m of groundwater and >75 million m of soil have been contaminated with radionuclides in sites across the United States. In addition to direct disposal to soils, trenches, cribs, etc., large volumes of waste remain in storage at several Department of Energy (DOE) sites. Due to their long half-lives a...

In recent years, pesticides were used heavily in Palestine, which led to the contamination of soil and water and causing many diseases. Many studies focused on the impact of pollutants such as pesticides and oil on soil, humans, animals, plants and the environment in general. Using column study the amount of glyphosate in soil decreases with increasing depth of soil, where it is for 0-30cm(11pp...

Michael S. Fuhrer, Chun Ning Lau, and Allan H. MacDonald carbide,7 which is emerging as a promising material for electronics applications, and is the subject of the review by First and co-authors in this issue. Several researchers have recently revisited the growth of graphene on metal surfaces8–10 and have developed techniques to transfer graphene from metals to insulating surfaces where elect...

This work analyzes the electron mobility in few-layer MoS2-based metal–insulator-semiconductor field-effect transistors. To do it, the Poisson and Schrödinger equations are self consistently solved using the effective mass approximation to model the six equivalent K valleys characteristic of multilayer MoS2. The mobility is calculated using the Kubo-Greenwood approach under the momentum relaxat...

objectives: it is important to recognize any risk factors for the development of injuries in the athletic population. the aim of this study was to investigate the association between joint hyper mobility and low back pain in iranian hyper mobile and non-hyper mobile athletes. methods: 50 athletic patients with low back pain (age=23.20±12.79 years) and 51 healthy athletes (age=24.28±13.70) from ...

Two dimensional atomic sheets, such as graphene and transition metal dichalcogenides (TMDs), have been widely studied as electronic materials for flexible nanoelectronics applications due to the high flexibility enabled by their natural 2D layered crystal structure. However, with the growing need for both high speed and low power consumption in realistic applications, TMDs with relatively low m...

Related Articles An all C60 vertical transistor for high frequency and high current density applications APL: Org. Electron. Photonics 5, 250 (2012) Application of in-cell touch sensor using photo-leakage current in dual gate a-InGaZnO thin-film transistors Appl. Phys. Lett. 101, 212104 (2012) Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxidesem...

ALD high-κ dielectrics and TiN metal-gate were successfully incorporated in both Si and Si0.7Ge0.3 surface-channel pMOSFETs. The high-κ gate dielectrics used included Al2O3 /HfAlOx /Al2O3, Al2O3 /HfO2 /Al2O3 and Al2O3. The Si transistors with Al2O3 /HfAlOx /Al2O3 showed a sub-threshold slope of 75 mV/dec. and a density of interface states of 3×10 cmeV. No obvious degradation of the Si channel h...