This paper presents a simple yet powerful dualgate MESFET (DGFET) DC model. It is based on a single 3-dimensional power series expression and provides a high degree of freedom making it generally applicable. Further, it enables analytical parameter extraction. The model is capable of tracking I/V measurements and derivatives in a large bias range and, hence, is large-signal compatible. Results ...

In the 21st century, environmental measures such as reducing CO2 emissions have been demanded in energy development. Si switching devices are generally used as electric power converting devices. To reduce power loss, the density of Si device integration has become satisfactorily high. As a result, the on-state resistance of a Si metal oxide semiconductor field effect transistor (MOSFET) reached...

The authors present an efficient approach to evaluate the large-signal (LS) parametric sensitivity of active semiconductor devices under quasi-periodic operation through accurate, multidimensional physics-based models. The proposed technique exploits efficient intermediate mathematical models to perform the link between physics-based analysis and circuit-oriented simulations, and only requires ...

A parallel implementation of the numerical simulation of a GaAs MESFET device using the finite difference discretisation scheme and solved by a point iterative method is presented. Parallel techniques targeted at Multiple-Instructions Multiple-Data (MIMD) message-passing distributed memory architectures, in particular, Transputers, are described. Efficient parallelism is achieved by the geometr...

Coupled electro-thermal simulations are performed to demonstrate predictive design of microwave devices. These simulations are based on an original, fully physical, thermal impedance matrix approach, capable of describing 'nearly exactly' time-dependent heat flow in complex 3-dimensional systems, whilst requiring no model reduction for electro-thermal CAD. This thermal model is validated by the...

A comprehensive large-signal MESFET model that provides a realistic description of measured characteristics over all operating regions is presented. It describes subthreshold conduction and breakdown. It has frequency dispersion of both transconductance and drain conductance, and derates with power dissipation. All derivatives are continuous for a realistic description of circuit distortion and...

The RKDG method has been effectively used in modeling and simulating semiconductor devices, where the underlying models are hydrodynamic in nature. These include classical as well as quantum models. In this paper, we survey and interpret some of these results. For classical transport, we review the simulation of a benchmark MESFET transistor by means of discontinuous Galerkin methods of degree ...

This paper presents a new approach for the global electromagnetic analysis of the three-Terminal active linear and nonlinear microwave circuits using the Finite-Difference Time Domain (FDTD) Method. Here, we have updated the both electric field components on the three terminal active device by correlating the voltage and current with its impedance. This approach is applied to the analysis of a ...