This paper presents an inductorless low-noise amplifier (LNA) design for an ultra-wideband (UWB) receiver frontend. A current-reuse gain-enhanced noise canceling architecture is proposed, and the properties and limitations of the gainenhancement stage are discussed. Capacitive peaking is employed to improve the gain flatness and 3-dB bandwidth, at the cost of absolute gain value. The LNA circui...

A single-stage ultra-wideband (UWB) CMOS low noise amplifier (LNA) employing interstage matching inductor on conventional cascode inductive source degeneration structure is presented in this paper. The proposed LNA is implemented in 0.18μm CMOS technology for a 3 to 5 GHz ultra-wideband system. By careful optimization, an interstage inductor can increase the overall broadband gain while maintai...

This paper presents the design and experimental results of a miniaturized monolithic 2.4/5.7 GHz concurrent dual-band low noise amplifier with cascade configuration using InGaP/GaAs HBT technology for the first time. The first stage of the LNA provides high gain and input matching simultaneously at both 2.4 GHz and 5.7 GHz bands. The output matching of the second stage is realized by shunt-shun...

A design and optimization of 3-5 GHz single ended Radio Frequency (RF) Low Noise Amplifier (LNA) for ultra-wide-band (UWB) applications using standard UMC 0.18 μm CMOS technology is reported. Designing of RF circuit components is a challenging job, since even after performing lengthy calculations and finding parameter values it is less guarantee that the design performs as expected. In view of ...

This paper presents an ultra-wideband (UWB) low noise amplifier (LNA) using two stage cascading topology to obtain high gain. Inductive degeneration and peaking inductor techniques are used to obtain wideband matching and flatness of gain. The proposed UWB LNA is implemented by using 180nm based CMOS TSMC technology using Advanced Design System (ADS) software.LNA achieves maximum gain of 15.5dB...

This paper presents two low noise amplifier (LNA) circuit topologies for ultra-wideband wireless communications in 0.13μm PHEMT GaAs technology. They are with source inductive degeneration and source grounded, respectively. The simulation results show that the LNA involving source inductor possesses good performances at 120MHz-3GHz. Its noise figure(NF) and voltage standing wave ratios(VSWRs) a...

Department of Physics and Electronics, University of Science-VNU Hochiminh City, Vietnam; Faculty of Electrical and Electronics Engineering, University of Technology, VNU Hochiminh City, Vietnam; Department of Electrical and Computer Engineering, University of Saskatchewan, Saskatoon, Canada Corresponding Author: Nhan Nguyen ______________________________________________________________________...

This paper presents a compact two-stage ultrawideband low-noise amplifier (LNA). A common-gate topology is adopted for the input stage to achieve wideband input matching, while a cascode stage is used as the second stage to provide power gain at high frequencies. A low power consumption and a small chip area are obtained by optimizing the performance of the LNA with tight constraint on biasing ...

This study presents a Ka-band direct-conversion receiver using 28-nm CMOS (Complimentary Metal Oxide Semiconductor) process for radar applications. The designed includes LNA (Low-Noise Amplifier), Mixer, and Baseband amplifier. adopts two-stage cascode amplifier structure. Then, the mixer is single-balanced passive with low flicker noise. At end, baseband transimpedance fat FET (Field-Effect-tr...

In this paper, ultra-low-voltage and ultra-lowpower circuit techniques are presented for CMOS RF front-ends. By employing a modified current-reused architecture, the low-noise amplifier (LNA) can operate at a very low supply voltage with microwatt power consumption while maintaining reasonable circuit performance at 2.4 GHz. Using a TSMC 0.18 um CMOS process, from the simulation results, the fu...