نتایج جستجو برای: laser interference lithography
تعداد نتایج: 284095 فیلتر نتایج به سال:
Large-area nanopatterning technology has demonstrated high potential which can signifi‐ cantly enhance the performance of many devices and products, such as LEDs, solar cells, hard disk drives, laser diodes, display, etc [1]. For example, nano-patterned sapphire substrates (NPSS) and photonic crystals (PhC) have been considered as the most effective approaches to improve the light output effici...
and thus alternative technologies such as extreme ultraviolet (EUV) lithography, nanoimprint lithography, interference lithography, and directed self-assembly (DSA) are emerging rapidly. [ 2 , 3 , 8–16 ] DSA of block copolymers (BCPs) has recently attracted much attention as a promising candidate for nextgeneration lithography due to its capacity to provide excellent resolution and scalability....
Hydrogen silsesquioxane (HSQ) photoresist has shown extremely high-resolution performance for electron-beam lithography and interference can be a potential candidate for...
Lithography is a key technology enabling progress both in fundamental research and in widespread applications. Besides standard technologies new alternative approaches have emerged over the last few years. Here we summarize the status of the field of atom lithography where light is used to focus matter on the nanometre scale. Using the special features of the atom–light interaction a variety of...
Abstract Optics manufacturing technology is predicted to play a major role in the future production of integrated photonic circuits. One drawbacks realization circuits damage optical materials by intense laser pulses. Here, we report on preparation series organic–inorganic hybrid photoresists that exhibit enhanced laser-induced threshold. These showed be candidates for fabrication micro-optical...
All nanofabrication methods come with an intrinsic resolution limit, set by their governing physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography at 13.5 nm wavelength, this limit is set by light diffraction and is ≈3.5 nm. In the semiconductor industry, the feasibility of reaching this limit is not only a key factor for the current developments in lithog...
The binding of molecular polymerization catalysts to solid supports, in the form of microporous particles or also flat substrates, has been extensively studied. 11 .] The primary aim is to gain control of the morphology of the polymer formed directly during polymerization. This approach can be convenient, for example, in saving additional processing steps if the polymer is formed directly in th...
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