نتایج جستجو برای: large scale covering

تعداد نتایج: 1443707  

1994
Timothy K. Horiuchi

The localization and orientation to various novel or interesting events in the environment is a critical sensorimotor ability in all animals, predator or prey. In mammals, the superior colliculus (SC) plays a major role in this behavior, the deeper layers exhibiting topographically mapped responses to visual, auditory, and somatosensory stimuli. Sensory information arriving from different modal...

2010
Dave Cliff Justin Keen Marta Kwiatkowska John McDermid Ian Sommerville

1 Authors listed in alphabetical order.

1994
Mário Jorge Silva Randy H. Katz Mário J. Silva

Active Documentation for VLSI Design

Journal: :IEICE Transactions 2008
Hidenori Ohta Toshinori Yamada Chikaaki Kodama Kunihiro Fujiyoshi

A 3D-dissection (A rectangular solid dissection) is a dissection of a rectangular solid into smaller rectangular solids by planes. In this paper, we propose an O-sequence, a string of representing any 3Ddissection which is dissected by only non-crossing rectangular planes. We also present a necessary and sufficient condition for a given string to be an O-sequence. key words: rectangular solid d...

2011
Jacob A. Abraham Muhammad Mudassar Nisar Emil Gizdarski Ananta K. Majhi Donghwi Lee Erik Chmelar Edward J. McCluskey Rajesh Tiwari Abhijeet Shrivastava Mahit Warhadpande Srivaths Ravi Zhaoliang Pan Melvin A. Breuer Srikanth Venkataraman Sunghoon Chun Taejin Kim Yongjoon Kim Sungho Kang Sreejit Chakravarty Narendra Devta-Prasanna Sudhakar M Reddy Irith Pomeranz James W. Tschanz Gurgen Harutunyan Valery Vardanian Niladri Narayan Mojumder Saibal Mukhopadhyay Jae-Joon Kim Ching-Te Chuang

2000
Xing Zhou Khee Yong Lim

This paper presents a novel approach to formulating compact I−V models for deep-submicron MOS technology development. The developed model is a one-region closedform equation that resembles the same form as the longchannel one, which covers full range of channel length and bias conditions. Model parameter extraction follows a oneiteration prioritized sequence with minimum measurement data, and c...

1998
Seiichiro Yamaguchi Hiroshi Goto

| Inverse modeling is a promising approach to know device structures made in experiments. We show our inverse modeling approach and its e ciency by demonstrating accurate extraction of deep submicron MOSFET structures. We also show that our approach can predict device performance to optimize its structure for required speci cation.

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