Please cite this article in press as: R. Dahal et a Er-doped III-nitride semiconductors have emerged as very attractive materials to achieve photonic devices with multiple functionalities for photonic integrated circuits (PICs). Optical sources and amplifiers based on these materials, particularly GaN and InGaN alloys, can operate at 1.54 lm and are expected to be temperature insensitive and ha...

The surface structures and growth kinetics of InGaN(0001) are studied. It is well known that during molecular beam epitaxy GaN surfaces undergo a smooth to rough transition when the growth condition is switched from Ga-rich to N-rich. It is found here that indium atoms have only small effect on this transition when deposited on GaN(000 ), but when deposited on GaN(0001) the indium acts as a sur...

AlGaN/GaN high electron mobility transistors (HEMTs) are favored for the use in high-power and highfrequency applications. Normally-off operation has been desired for various applications, but proved to be difficult to achieve. Recently, a new approach was proposed by Mizutani et al. [Mizutani T, Ito M, Kishimoto S, Nakamura F. AlGaN/GaN HEMTs with thin InGaN cap layer for normally-off operatio...

In this study, we have grown 380-nm ultraviolet light-emitting diodes (UV-LEDs) based on InGaN/AlInGaN multiple quantum well (MQW) structures on free-standing GaN (FS-GaN) substrate by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD), and investigated the relationship between carrier localization degree and FS-GaN. The micro-Raman shift peak mapping image shows low standa...

Photoinduced carrier dynamics in a sequence of InGaN/GaN multiple quantum wells (MQWs) are studied by employing steady state and ultrafast spectroscopy at room temperature. Time-resolved photoluminescence (PL) measured short carrier lifetimes of ,140 ps at room temperature. Steady state differential transmission was used to measure the in-well field screening due to the photoinjected carriers. ...

UV InGaN and GaN single-quantum well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. When the emission wavelength of UV InGaN LEDs was shorter than 380 nm, the external quantum efficiency (EQE) of the LED on ELOG was much higher than that on sapphire, but only for highcurrent operation. At low-current operation, both LEDs ...

Significant synthetic challenges remain for the epitaxial growth of high-quality InGaN across the entire compositional range. One strategy to address these challenges has been to use the nanowire geometry because of its strain relieving properties. Here, we demonstrate the heteroepitaxial growth of In(x)Ga(1-x)N nanowire arrays (0.06 ≤ x ≤ 0.43) on c-plane sapphire (Al(2)O(3)(001)) using a hali...

In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output p...

n-InGaN/p-Cu 2 O core-shell nanowire (NW) p–n junctions enable efficient self-powered photoelectrochemical photodetectors (PEC PDs) in the visible. The photocurrent density under one-sun illumination is enhanced by 8 times compared to that of bare InGaN NW PEC PDs due maximized photocarrier separation built-in electric field junction. responsivity reaches 173 ?A/W illumination. response 30–40 m...

In this study, the surface morphology and luminescence characteristics of InGaN/GaN multiple quantum wells were studied by applying different flow rates ammonia during MOCVD growth, best growth conditions InGaN layers for green laser diodes explored. Different emission peak observed in temperature-dependent photoluminescence (TDPL) examination, which showed significant structural changes appear...