The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been highly debated in the last few years. Here, we report on the use of indium droplets to tune the growth direction of self-catalyzed InAs nanowires. The indium droplets are formed in situ on InAs(Sb) stems. Their position is modified to promote growth in the 〈11-2〉 or equivalent directions. We also show that...

Based on viscoplastic Anand’s model, the structural stress of 8 8 InSb infrared focal plane array detector with underfill is systematically analyzed by finite element method, and the impacts of design parameters including indium bump diameters, heights on both Von Mises stress and its distribution are discussed in this manuscript. Simulation results show that for the given indium bump height, t...

in this paper, indium tin oxide (ito) nanoparticles has been prepared by chemical methods under given conditions with solution of indium chloride (incl3·4h2o), tin chloride (sncl4·5h2o) in ammonia solution. the samples were characterized by x-ray diffraction (xrd) and scanning electron microscopy (sem) analyses after heat treatments. the sem results showed that, the size of the ito particles pr...

Unlike silver and gold, indium has material properties that enable strong resonances extended up to the ultraviolet. This extended response, combined with low cost, and ease of synthesis process, makes indium a highly promising material for applications. In this work, we have synthesized ligand-protected indium nanoparticles by a metal reduction method. Powder X-ray diffraction and EDX analyses...

Articles you may be interested in Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors Appl. Temperature dependence of negative bias under illumination stress and recovery in amorphous indium galli...

InGaN alloys with (0001) or (000 ) polarities are grown by plasma-assisted molecular beam epitaxy. Scanning tunneling microscopy images, interpreted using first-principles theoretical calculations, show that there is strong indium surface segregation on InGaN for both (0001) and (000 ) polarities. Evidence for the existence and stability of a structure containing two adlayers of indium on the I...

Thirty eight patients with chronic sputum expectoration underwent indium-111 labelled granulocyte lung scanning and measurement of whole body loss of indium-111 labelled granulocytes. Twenty four patients had radiologically proved bronchiectasis and 14 had mucus hypersecretion without radiological evidence of bronchiectasis. None was having an acute exacerbation at the time of the scan. The med...

Based on viscoplastic Anand’s model, structural stress of 8 8 InSb array detector dependent on indium bump sizes is systemically researched by finite element method. For the detector with underfill, simulation results show that as the diameters of indium bump decrease from 36μm to 20μm in step of 2μm, the maximum stress existing in InSb chip first reduces sharply, then increases flatly, and rea...

Deposition of indium on Si(100) substrates is performed under ultrahigh vacuum with an amplified Ti:sapphire laser (130 fs) at wavelength of 800 nm and laser fluence of 0.5 J/cm. Indium films are grown at room temperature and at higher substrate temperatures with a deposition rate of ~ 0.05 ML/pulse. Reflection high-energy electron diffraction (RHEED) is used during the deposition to study the ...