The low-temperature electron mobility is investigated here for electrons confined in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells. The subband structure calculation is developed via variational method, both Schrödinger and Poisson equations being solved simultaneously with adequate heterointerface matching conditions. With this in hands, the main electron scattering rates ...

The effect of various dielectrics on charge mobility in single-layer graphene is investigated. By calculating the remote optical phonon scattering arising from the polar substrates, and combining it with their effect on Coulombic impurity scattering, a comprehensive picture of the effect of dielectrics on charge transport in graphene emerges. It is found that though highdielectrics can strongly...

Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the transport properties are mainly governed by completely screened short range impurity scattering. On the other hand, for the low mobility devices transport prop...

The energy band structure of FeAs-based superconductors is fitted by a tight-binding model with two Fe ions per unit cell and two degenerate orbitals per Fe ion. Based on this, superconductivity with extended s-wave pairing symmetry of the form cosk(x)+cosk(y) is examined. The local density of states near an impurity is also investigated by using the T-matrix approach. For the nonmagnetic scatt...

Spin-dependent scattering is considered to be the origin of giant magnetoresistance in magnetic multilayers, although the role of bulk or interface defects is still under discussion. We present calculations of spin-dependent impurity scattering potentials as a function of the impurity position in a Co/Cu-multilayer. The calculations are performed within spin density functional theory using a Gr...

We report on the calculation of the two dimension electron gas (2DEG) mobility in scaled AlGaN/ GaN metal-insulator-semiconductor high-electron-mobility-transistors. We investigate the effect of remote impurity and phonon scattering models on the 2DEG mobility of the dielectric/AlGaN/GaN structure and investigate its variation with dielectric/AlGaN interface charge density, 2DEG concentration, ...

We use a Boltzmann equation to determine the magnetoconductivity of quantum wires. The presence of a confining potential in addition to the magnetic field removes the degeneracy of the Landau levels and allows one to associate a group velocity with each single-particle state. The distribution function describing the occupation of these single-particle states satisfies a Boltzmann equation, whic...

Nanoelectronic device properties are usually influenced rather strongly by impurities and atomistic disorder. Examples are electron scattering by dopants in semiconductor nano-wires, spin scattering by disorder in magnetic tunnel junctions, and spin polarized current in dilute magnetic semiconductors. Theoretically, any calculated transport quantity must be averaged over the ensemble of possibl...

We study the role of impurity scattering on the photoluminescence (PL) emission of polarized magnetoexcitons. We consider systems where both the electron and hole are confined on a ring structure (quantum rings) as well as on a type-II quantum dot. Despite their neutral character, excitons exhibit strong modulation of energy and oscillator strength in the presence of magnetic fields. Scattering...

A far-infrared p-type germanium laser with active crystal prepared from ultra pure single-crystal Ge by neutron transmutation doping ~NTD! is demonstrated. Calculations show that the high uniformity of Ga acceptor distribution achieved by NTD significantly improves average gain. The stronger ionized impurity scattering due to high compensation in NTD Ge is shown to have insignificant negative i...