Critical dimensions for nanowire core-multishell heterostructures are analyzed by using finite-element method based on the energy equilibrium criteria. Results show that the nanowire core-shell heterostructure can sufficiently reduce the strain in the shell and increase the critical shell thickness. The critical dimensions for the nanowire core-multishell heterostructure are determined by the s...

Graphene-Boron Nitride (G-BN) heterostructures can lead to the realization of nanoscale electronics that will be smaller than the dimensional limit—14 nanometers—of silicon transistors and provide higher mobilities. However, the grapheneboron nitride heterostructure although self-insulating, cannot function as a transistor alone due to not having a second conducting pathway. Thus, the utilizati...

We report bright white-light electroluminescence (EL) from a diode structure consisting of a ZnO nanorod (NR) and a p-type conducting polymer of poly(fluorine) (PF) fabricated using a hydrothermal method. ZnO NRs are successfully grown on an organic layer of PF using a modified seeding layer. The EL spectrum shows a broad emission band covering the entire visible range from 400 to 800 nm. White...

Patrick Abraham John E. Bowers Department of Electrical and Computer Engineering University of California–Santa Barbara Santa Barbara, California 93106-9560 Abstract. Active refrigeration of optoelectronic components through the use of monolithically grown thin-film solid-state coolers based on III-V materials is proposed and investigated. Enhanced cooling power compared to the thermoelectric e...

The interlayer interaction of vertically stacked heterojunctions is very sensitive to the interlayer spacing, which will affect the coupling between the monolayers and allow band structure modulation. Here, with the aid of density functional theory (DFT) calculations, an interesting phenomenon is found that MoS2-WS2, MoS2-WSe2, and WS2-WSe2 heterostructures turn into direct-gap semiconductors f...

The lateral integration of graphene and hexagonal boron nitride permits the intricate design of a hybrid heterostructure in which electronic characteristics can be tuned as per the requirement of a particular application. Such laterally integrated hybrid nanostructures are investigated using density functional theory to explore their growth, electronic properties, and chemical topology. The evo...

Ni-silicide/Si nanowires were fabricated by atomic force microscope nano-oxidation on silicon-on-insulator substrates, selective wet etching, and reactive deposition epitaxy. Ni-silicide nanocrystal-modified Si nanowire and Ni-silicide/Si heterostructure multi-stacked nanowire were formed by low- and high-coverage depositions of Ni, respectively. The Ni-silicide/Si Schottky junction and Ni-sili...

Despite the extensive research on MnO2 as a pseudocapacitor electrode material, there has been no report on heterostructures of multiple phase MnO2. Here we report the combination of two high-capacitance phases of MnO2, namely, a-MnO2 nanowires and d-MnO2 ultrathin nanoflakes, to form a core-branch heterostructure nanoarray. This material and structure design not only increases the mass loading...

We report a first-of-its-kind, unique approach for generating a self-aligned, gate-stacking heterostructure of Ge quantum dot (QD)/SiO2/SiGe shell on Si in a single fabrication step. The 4-nm-thick SiO2 layer between the Ge QD and SiGe shell fabricated during the single-step process is the result of an exquisitely controlled dynamic balance between the fluxes of oxygen and silicon interstitials...

We have investigated the growth of ternary CdSSe nanostructures by physical vapor transport, specifically aiming at the synthesis of CdSSe nanosheets. CdSSe nanostructures with various S mole fractions are grown at growth temperatures less than 800 degrees C and photoluminescence from these nanostructures covers the entire visible spectral range. Morphological evolution from nanowires to nanosh...