ETRI Journal, Volume 28, Number 3, June 2006 ABSTRACT—Monolithic SiGe heterojunction bipolar transistor (HBT) variable gain amplifiers (VGAs) with a feedforward configuration have been newly developed for 5 GHz applications. Two types of the feedforward VGAs have been made: one using a coupled-emitter resistor and the other using an HBT-based current source. At 5.2 GHz, both of the VGAs achieve...

In this paper we review an analytical electrothermal model, already proposed by us, able to calculate the temperature and current distribution for any integrated device, whose structure can be represented as an arbitrary number of superimposed layers with a 2-D embedded thermal source, so as to include the effect of the package. The model allows to optimize the device layout through the solutio...

This paper discusses the design and implementation of an inductorless differential VCO with a maximum oscillation frequency of 20 GHz, in a 47 GHz SiGe process technology. The VCO is based on a full-wave rectification frequency-doubling technique, applied to a half rate differential single-stage feedback oscillator. It also benefits from a new circuit phenomenon named hereinafter Self Injection...

This paper presents single-event effect (SEE) modeling results of circuit-hardened SiGe heterojunction bipolar transistor logic circuits. A simple equivalent circuit is proposed to model the ion-induced currents at all of the terminals, including the p-type substrate. The SEE sensitivity of a D-flip-flop was simulated using the proposed equivalent circuit. The simulation results are qualitative...

Field programmable gate arrays (FPGAs) are flexible programmable devices that are used in a wide variety of applications such as network routing, signal processing, pattern recognition and rapid prototyping. Unfortunately, the flexibility of the FPGA hinders its performance due to the additional logic resources required for the programmable hardware. Today’s fastest FPGAs run in the 250 MHz ran...

The paper presents analysis and design of a -band subharmonic mixer (SHM) with high conversion gain. The SHM consists of a local oscillator (LO) frequency doubler, RF pre-amplifier, and single-ended mixer. The SHM has been fabricated in a high-speed InP double heterojunction bipolar transistor (DHBT) technology using coplanar waveguide structures. To the best of our knowledge, this is the first...

The LDRD entitled “Role of Defects in 111-Nitrde Based Devices” is aimed to place Sandia National Laboratory at the forefront of the field of GaN materials and devices by establishing a scientific foundation in areas such as material growth, defect characterization/modeling, and processing (metalization and etching) chemistry. In this SAND report we summarize our studies such as i) the MOCVD gr...

We present the first systematic experimental and modeling results of noise corner frequency ( ) and noise corner frequency to cutoff frequency ratio ( ) for SiGe heterojunction bipolar transistors (HBTs) in a commercial SiGe RF technology. The and ratio are investigated as a function of operating collector current density, SiGe profile, breakdown voltage, and transistor geometry. We demonstrate...

We propose and demonstrate both a binary and ternary adder circuit based on a resonant tunneling diode (RTD) and a bipolar transistor. The basic switching cell consists of an RTD in series with the base of a bipolar transistor. The RTD is used to set a threshold voltage for the switching of the transistor.

Quantum key distribution (QKD) has rapidly developed recently. The repetition frequency of the QKD system increases from tens or hundreds MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source system. We present an LD driver circuit fabricated 0.18 μm SiGe heterojunction bipolar transistor complementary metal oxide semiconductor technology....