This paper presents single-event effect (SEE) modeling results of circuit-hardened SiGe heterojunction bipolar transistor logic circuits. A simple equivalent circuit is proposed to model the ion-induced currents at all of the terminals, including the p-type substrate. The SEE sensitivity of a D-flip-flop was simulated using the proposed equivalent circuit. The simulation results are qualitative...

Field programmable gate arrays (FPGAs) are flexible programmable devices that are used in a wide variety of applications such as network routing, signal processing, pattern recognition and rapid prototyping. Unfortunately, the flexibility of the FPGA hinders its performance due to the additional logic resources required for the programmable hardware. Today’s fastest FPGAs run in the 250 MHz ran...

The paper presents analysis and design of a -band subharmonic mixer (SHM) with high conversion gain. The SHM consists of a local oscillator (LO) frequency doubler, RF pre-amplifier, and single-ended mixer. The SHM has been fabricated in a high-speed InP double heterojunction bipolar transistor (DHBT) technology using coplanar waveguide structures. To the best of our knowledge, this is the first...

The LDRD entitled “Role of Defects in 111-Nitrde Based Devices” is aimed to place Sandia National Laboratory at the forefront of the field of GaN materials and devices by establishing a scientific foundation in areas such as material growth, defect characterization/modeling, and processing (metalization and etching) chemistry. In this SAND report we summarize our studies such as i) the MOCVD gr...

We present the first systematic experimental and modeling results of noise corner frequency ( ) and noise corner frequency to cutoff frequency ratio ( ) for SiGe heterojunction bipolar transistors (HBTs) in a commercial SiGe RF technology. The and ratio are investigated as a function of operating collector current density, SiGe profile, breakdown voltage, and transistor geometry. We demonstrate...

We propose and demonstrate both a binary and ternary adder circuit based on a resonant tunneling diode (RTD) and a bipolar transistor. The basic switching cell consists of an RTD in series with the base of a bipolar transistor. The RTD is used to set a threshold voltage for the switching of the transistor.

Quantum key distribution (QKD) has rapidly developed recently. The repetition frequency of the QKD system increases from tens or hundreds MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source system. We present an LD driver circuit fabricated 0.18 μm SiGe heterojunction bipolar transistor complementary metal oxide semiconductor technology....

This paper provides the details of a study on effects electron irradiation two Low Noise Amplifiers (LNA), Gallium-Arsenide (GaAs) pseudomorphic high mobility transistor (pHEMT) based and Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous studies have shown that properties GaAs SiGe HBT's are very tolerant gamma, neutron, proton without additional radiation hardeni...

In this article, the design and development of ultra-wideband UWB branch-line couplers BLCs with a novel method to control coupling imbalance are proposed. The proposed BLC is suitable for 5G low-noise amplifier (LNA) design. 4-branch designed using curves developed even odd mode analyses cover (3.3-5 GHz) frequency bands. vertical branches replaced by modified ones, their effect on investigate...

The analysis, design, and measurement of two Indium Phosphide (InP) heterojunction bipolar transistor (HBT) power amplifier (PA) designs are presented at G-band with record efficiency. A pseudo-differential common-base (CB) stage neutralization capacitors low-loss coupled-line balun (CLB) improve the gain reduce matching loss. single-stage design achieves 8.3 to 12.7-dBm output 7.7 17.3% power-...