نتایج جستجو برای: hafnium compounds

تعداد نتایج: 228538  

Journal: :Materials Science and Engineering: A 2010

Journal: :European Journal of Inorganic Chemistry 2007

Journal: :Angewandte Chemie International Edition 2007

Journal: :Materials research express 2021

The phase stability of the hafnium dioxide compounds HfO2, a novel material with wide range application due to its versatility and biocompatibility, is predicted be achievable by using evolutionary technique, based on first-principles calculations. Herein, candidate structure HfO2 revealed adopt tetragonal under high-pressure P4/nmm space group. This evidently confirms structures, since decompo...

Journal: :Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2004

2015
Elisa Sani Luca Mercatelli Jean-Louis Sans Laura Silvestroni Diletta Sciti

The present work reports on the comparative characterization of optical properties of hafnium and zirconium-based ultra-refractory ceramics at room and high temperature, in view of their possible use in novel solar receivers for thermal solar plants operating at higher temperatures. We show how porosity and surface finishing affect both the spectral reflectance and the high-temperature emittanc...

2012
I-Shun Wang Yi-Ting Lin Chi-Hsien Huang Tseng-Fu Lu Cheng-En Lue Polung Yang Dorota G Pijanswska Chia-Ming Yang Jer-Chyi Wang Jau-Song Yu Yu-Sun Chang Chien Chou Chao-Sung Lai

Thin hafnium oxide layers deposited by an atomic layer deposition system were investigated as the sensing membrane of the electrolyte-insulator-semiconductor structure. Moreover, a post-remote NH3 plasma treatment was proposed to replace the complicated silanization procedure for enzyme immobilization. Compared to conventional methods using chemical procedures, remote NH3 plasma treatment reduc...

2010
J. Brandon Keith Jacob R. Fennick Daniel R. Nelson Chad E. Junkermeier Jiao Y. Y. Lin Chen W. Li Michael M. McKerns James P. Lewis Brent Fultz

AtomSim, a collection of interfaces for computational crystallography simulations, has been developed. It uses forcefield-based dynamics through physics engines such as the General Utility Lattice Program, and can be integrated into larger computational frameworks such as the Virtual Neutron Facility for processing its dynamics into scattering functions, dynamical functions etc. It is also avai...

2007
S. Abermann G. Sjoblom J. Efavi M. Lemme J. Olsson E. Bertagnolli

The reduction of the equivalent oxide thickness (EOT) of the gate oxide has emerged as one of the most difficult tasks addressing future CMOS technology. In order to overcome gate tunneling, the introduction of so-called high-κ materials will be necessary [1]. Hafnium dioxide, HfO2 [2], zirconium dioxide, ZrO2 [3], and their silicates are assumed to be the most promising candidates to fulfil th...

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