Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying th...

We establish dispersion engineering rules that allow us to control the thermalization process and thermal state of an initial beam propagating in a multimode nonlinear photonic circuit. To this end, we have implemented kinetic equation (KE) approach systems whose Bloch relation exhibits bands gaps. When ratio between gap-width band-width is larger than critical value, KE has stationary solution...

We have developed a Kramers–Kronig consistent analytical expression to fit the measured optical functions of hydrogenated amorphous silicon (a-Si:H) based alloys, i.e., the real and imaginary parts of the dielectric function (e1 ,e2) ~or the index of refraction n and absorption coefficient a! versus photon energy E for the alloys. The alloys of interest include amorphous silicon–germanium (a-Si...

The basic aim of this research work is to present the synthesis of ZnSe thin film, by varying doping concentration of selenium oxide on ITO plate using a relatively simple and low cost traditional electrodeposistion technique. The physical properties obtained are similar to that reported earlier. The compatibility of the room temperature ZnSe thin films for structural, optical properties are in...

Electronic structure calculations for YH3 within the local density approximation result in a metallic ground state with the bands at the Fermi energy overlapping by more than 1 eV, whereas a band gap of 2.8 eV is deduced from optical experiments. Here, we report the results of parameter-free GW calculations which predict a fundamental gap of 1 eV. When we take into account electric dipole matri...

[email protected] Abstract – The CdO thin films were deposited using NaOH as the complexing agent by Successive Ionic Layer Adsorption and Reaction (SILAR) method. The UV-VIS-NIR spectroscopy was used for film characterization. The deposited CdO thin film shows high absorbance in the UV region and low in the visible to near IR region of the spectroscopy. The energy band gap of the deposi...

We present first-principles calculations of the electronic structure of BiVO4 at various levels of theory. In the calculations, we take into account a series of effects that affect the band gap, i.e., spin-orbit coupling, electron-hole interaction, nuclear quantum motions, and thermal vibrations. All these effects lead to a significant renormalization of the band gap. After including the releva...

Sn 0.986 Ni 0.014 O nanoparticles have been synthesized by a simple co-precipitation method. Nanoparticles crystallize in lower temperature (350°C) and shorter time (2h) respect to other methods. The sample characterized by various standard techniques such as Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Atomic absorption spectroscopy (AAS) and UV–Vis spectroscopy. T...

in this paper, a new design of optical channel drop filter based on two- dimensional photonic crystal ring resonators with triangular lattice is proposed. the rods of this structure is silicon with the refractive index nsi=3.46 and the surrounding environment is air with the refractive index of nair=1.the widest photonic band gap obtains for the filling ratio of r/a = 0.2. the filter’s transmis...