Volatile Ovonic threshold switching (OTS) are promising not only as the selector in crossbar resistive memory arrays, but also true random number generators (TRNG) by utilizing its probabilistic characteristics. However, investigation on reliability of OTS-based TRNG is still lacking, which hinders practical application. Previously, we found that probability dependent pulse amplitude and width....

Displacive martensitic phase transition is potentially promising in semiconductor based data storage applications with fast switching speed. In addition to traditional materials, the recently discovered two-dimensional ferroic materials are receiving lots of attention owing their dynamics, which could tremendously boost density and enhance read/write this study, we propose that a terahertz lase...

The ability to switch between distinct states of polarization comprises the defining property ferroelectrics. However, microscopic mechanism responsible for switching is not well understood and theoretical estimates based on coherent monodomain typically overestimate experimentally determined coercive fields by orders magnitude. In this work we present a detailed first principles characterizati...

Abstract Layered group-IV monochalcogenides, including GeS, GeSe, SnS, and SnSe, garner attention because of their anisotropic structures properties. Here, we report on the growth GeS microribbons via chemical vapor transport (CVT), which affords each them with a low-symmetry orthorhombic structure optical electronic The single-crystalline nature microribbon, has typical thickness ~30 nm, is co...

We report an approach to incorporate Ge into Cu2ZnSnSe4 using GeSe vapor during the selenization step of alloyed metallic precursors. The incorporation slowly begins at T ≈ 480 °C and peaks 530 °C, resulting in a Ge-based composition shift inside previously formed kesterite layer. initially observe formation Ge-rich surface layer that merges homogeneous distribution incorporated element further...

The structural and optical characterization of Se-Ge alloys during melt quenching technique was the goal of this study. In this regards, five different samples of Se100-xGex (x= 10, 20, 30, 40, 50) were prepared by conventional melt quenching in quartz ampoule. The produced samples were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), differential scanning calori...