Germanium (Ge) plays a crucial role in setting up important functionalities for silicon-compatible photonics. Diamond cubic germanium is an extensively studied semiconductor, although its other exotic forms, like BC8, ST8, ST12 phases, may possess distinct electronic properties. We have fabricated stable ST12-Ge nanowires via self-seeded bottom-up three phase growth confined supercritical tolue...

The vapor–liquid–solid (VLS) method is considered a plausible technique for synthesizing germanium (Ge) nanostructures (e.g., nanowires), which have broad range of applications due to their unique electronic properties and intrinsic compatibility with silicon. However, crystallization failures material defects are still frequently observed in VLS processes, insufficient understanding underlying...

cofe/cu multilayer nanowires were electrodeposited into anodic aluminum oxide templates prepared by a two-step mild anodization method, using the single-bath technique. nanowires with 30 nm diameter and the definite lengths were obtained. the effect of cofe layers thickness and annealing on the magnetic behavior of the multilayer nanowires was investigated. the layers thickness was controlled t...

The Fe nanowires were prepared by Ac electrodeposition method. The two steps anodized aluminum oxides (alumina) were used as templates for electrodeposition of magnetic nanowires. Sulfuric acid was used to anodize aluminum. The pours diameter and growth rate of alumina were investigated. The FeSO4 electrolyte was used for growth of nanowires. The prepared magnetic nanowires were characterized b...