Human ether-a-go-go-related gene (hERG) potassium channels exhibit unique gating kinetics characterized by unusually slow activation and deactivation. The N terminus of the channel, which contains an amphipathic helix and an unstructured tail, has been shown to be involved in regulation of this slow deactivation. However, the mechanism of how this occurs and the connection between voltage-sensi...

Advanced f oating body Z-RAM memory cells are studied and in particular, their scalability is investigated. First, a Z-RAM cell based on a 50nm gate length double-gate structure corresponding to state of the art technology is studied. A bi-stable behavior essential for Z-RAM operation is observed even in fully depleted structures. It is demonstrated that by adjusting the supply source-drain and...

ion channels are naturally occurring pores through the proteins that regulate the passage of ions and thus maintain the concentration of ions inside and outside the cell. the ion channels control many physiological functions and they can show selectivity for a specific ion. ion channels are mostly observed in nerve cells and muscle cells. the influx of ions into cells can be regulated by a gate...

In Figure 2c of the main text, the conductance resonances lowermost in bias voltage Vbias abruptly change both curvature and amplitude in the magnetic field range 4 T . B‖ . 8 T (i.e., when reaching Vbias = 0). This behaviour can be explained by reminding us of the measurement technique. The conductance traces in Figures 2b and 2c are recorded at constant gate voltage V ∗ gate = 0.675 V. As an ...

Decreased power supply levels have reduced the tolerance to voltage changes within power distribution networks in CMOS integrated circuits. High on-chip currents, required to charge and discharge large on-chip loads while operating at high frequencies, produce significant transient IR voltage drops within a power distribution network. These transient IR voltage drops can affect the propagation ...

A novel technique using a keeper with a simultaneous low supply voltage and low body voltage is proposed to improve the overall performance of high fan-in OR gates without modifying the physical dimensions of the keeper. Simulation results of a 16-input domino OR gate using 45 nm CMOS technology show that the proposed technique could trade off between a high power/speed efficient operation and ...

Carbon nanotube Josephson junctions in the open quantum dot limit are fabricated using Pd/Al bilayer electrodes, and exhibit gate-controlled superconducting switching currents. Shapiro voltage steps can be observed under radio frequency current excitations, with a damping of the phase dynamics that strongly depends on the gate voltage. These measurements are described by a standard resistively ...

Introduction For high-speed logic applications, suppression of the power consumption is very important and thus supply voltage should be reduced at every new generation. In order to realize high performance despite a low supply voltage, gate oxide thickness has to be reduced continuously. In fact, it has been suggested that even 1.6 -1.1 nm EOT (equivalent physical SiO2 thickness) gate insulato...