Abstract The advancement in technology semiconductor materials significantly contributed improvement of human life by bringing breakthrough fabrication optoelectronics and power devices which have wide applications medicine communication. Gallium Arsenide (GaAs) Nitride (GaN) are versatile for such but with relative merits demerits. GaAs transistors suitable both narrowband wideband due to very...

We applied the laser interference lithography method to form a patterned sapphire substrate (PSS). A three-dimensional photonic crystal was formed by autocloning the PSS with alternate Ta2O5/SiO2 coatings. A high total integrated reflectance (TIR) band was obtained around the 410 to 470 nm wavelength range that matched the emission spectrum of the gallium nitride (GaN) light-emitting diode (LED...

Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6HSiC(0001) substrates with no miscut and with 3.5° miscuts in both the [1 1 00] and [11 2 0] directions. The hydrogen-etched substrates display straight or chevron shaped steps, respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films ...