The electromagnetic manipulation of isolated atoms has led to many advances in physics, from laser cooling and Bose-Einstein condensation of cold gases to the precise quantum control of individual atomic ions. Work on miniaturizing electromagnetic traps to the micrometer scale promises even higher levels of control and reliability. Compared with ‘chip traps’ for confining neutral atoms, ion tra...

SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compoun...

We demonstrate active beam steering of terahertz radiation using a photo-excited thin layer of gallium arsenide. A constant gradient of phase discontinuity along the interface is introduced by an spatially inhomogeneous density of free charge carriers that are photo-generated in the GaAs with an optical pump. The optical pump has been spatially modulated to form the shape of a planar blazed gra...

Optical and electronic devices for optoelectronic integrated circuits have been extensively studied, and now, more efforts for the conversion between optical and electrical signals are accordingly required. In this work, a silicon (Si)-compatible optically drivable III-V-on-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is studied by simulation. The proposed optoelectronic device...

Hot carrier dynamics critically impacts the performance of electronic, optoelectronic, photovoltaic, and plasmonic devices. Hot carriers lose energy over nanometer lengths and picosecond timescales and thus are challenging to study experimentally, whereas calculations of hot carrier dynamics are cumbersome and dominated by empirical approaches. In this work, we present ab initio calculations of...

Yang, Tian M.S.E.C.E, Purdue University, December, 2007. Capacitance-voltage studies of atomic-layer-deposited MOS structrures on Gallium Arsenide and other III-V compound semiconductors . Major Professor: Peide Ye. Si-based CMOS devices with traditional structure are approaching the fundamental physical limits. New device structures and materials must be explored to continue the trend of incre...

In this study, we present options for extending the endurance of a lightweight unmanned aerial vehicle (UAV), along with their advantages and disadvantages. We developed solution based on use gallium–arsenide (GaAs) solar modules installed UAV connected to custom-made maximum power point tracker (MPPT) an integrated perturb observe (P&O) algorithm. The mathematical behavior required calcula...

The exponential rise in the density of silicon CMOS transistors has now reached a limit and threatening to end the microelectronics revolution. To tackle this difficulty, group III–V compound semiconductors due to their outstanding electron transport properties and high mobility are very actively being researched as channel materials for future highly scaled CMOS devices. In this paper, we have...