نتایج جستجو برای: gallium arsenide
تعداد نتایج: 16417 فیلتر نتایج به سال:
Since the original theoretical insights of Bardeen and Shockley about 40 years ago, the progress of solid-state electronics has been paced by the ability to control chemical bonding structures, particularly at surfaces and interfaces. The functioning of solid-state devices depends on being able to produce interfacial structures with a minimum number of defective chemical bonds. A series of chem...
Entanglement generation, single-photon detection, and frequency upconversion are all key ingredients of a proposed quantum communication scheme. We have demonstrated single-photon detection at 1.55 jim with commercial indium gallium arsenide avalanche photodiodes that were passively quenched, thermoelectrically cooled, and gated to operate above breakdown voltage in Geiger mode. When cooled to ...
A new series of 30 miscellaneous National Toxicology Program chemicals has been evaluated prospectively for carcinogenicity and overt toxicity by COMPACT (Computer Optimised Molecular Parametric Analysis for Chemical Toxicity. CYP1A and CYP2E1). Evaluations were also made by Hazardexpert, and for metal ion redox potentials; and these, together with COMPACT, were compared with results from the A...
Based on a thermodynamically consistent model for precipitation in gallium arsenide crystals including surface tension and bulk stresses by Dreyer and Duderstadt [DD08], we propose two different mathematical models to describe the size evolution of liquid droplets in a crystalline solid. The first model treats the diffusion-controlled regime of interface motion, while the second model is concer...
We develop a theoretical formulation to calculate the absolute and differential transmission of a focused laser beam through a high-aperture optical system. The focused field interacts with a point dipole that is buried in a high-index material, and is situated at the Gaussian focus of the focusing and collection two-lens system. The derived expressions account for the vectorial nature of the f...
Abstract Ultrafast laser inscription (ULI) inside semiconductors offers new perspectives for 3D monolithic structures to be fabricated and functionalities added in electronic photonic microdevices. However, important challenges remain because of nonlinear effects such as strong plasma generation that distort the energy delivery at focal point when exposing these materials intense infrared light...
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