Water-enhanced degradation of p-type low temperature polycrystalline silicon thin film transistors under negative bias temperature (NBT) condition is studied. H2O penetration into gate oxide network and the role of H2O during NBT stress are confirmed and clarified respectively. To prevent H2O diffusion, a combination of a layer of PECVD SiO2 and a layer of PECVD Si3N4 as passivation layers are ...

Article history: Received 21 May 2017 Received in revised form 19 July 2017 Accepted 26 July 2017 Available online 7 August 2017 For the next generation display, foldable display is one of the attractive candidates. However, the degradation effects due to themechanical stress on the device are unavoidable. A strain due to themechanical stress generates cracks on the thin film transistors (TFTs)...

Thermal dependence of low frequency noise in low temperature (600°C) polysilicon thin film transistors is studied in devices biased from weak to moderate inversion and operating in the linear mode. Drain current noise spectral density, measured in the temperature range from 260K to 310K, is thermally activated following the Meyer Neldel rule. Analysis of the thermal activation of noise, suppor...

This study investigated the chemical grafting of a single-layer poly(vinyl alcohol) (PVOH) film. The effect of the grafting parameters (grafting time, grafting temperature, and concentration of fatty acid chloride) on the hydrophobicity of the film surface and the film solubility were evaluated. The PVOH substrate film (cold-water soluble at 20°C) was manufactured by flat extrusion and had a th...

Perpendicular magnetization and precise control over the magnetic easy axis in magnetic thin film is necessary for a variety of applications, particularly in magnetic recording media. A strong (111) orientation is successfully achieved in the CoFe2O4 (CFO) thin film at relatively low substrate temperature of 100 °C, whereas the (311)-preferred randomly oriented CFO is prepared at room temperatu...

0026-2714/$ see front matter 2009 Elsevier Ltd. A doi:10.1016/j.microrel.2009.10.014 * Corresponding author. Address: Institute of Microe Patriarchou Grigoriou and Neapoleos Strs, Aghia Paras 210 6503239; fax: +30 210 6511723. E-mail address: [email protected] (D In this work we point out the importance of the device parameter Vg,max–Vth (the difference between the gate voltage at max...

With the growing use of wireless electronic systems, off-state leakage current in MOSFETs appears as one of the major physical limitations. Measurements of quantum tunnel current between source-drain (S-D) have recently shown that it will become detrimental in bulk MOSFET architecture for channel lengths around 5nm and at low temperature (≤100K) [1]. In this paper we investigate, using a 2D qua...

TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO...

Nanocalorimetry is a technique that deals with any thermal measurement methods in which either the samples to be studied have a size in the range of the nanometer scale or the measured energies involved are of the order of the nanojoule or below [1]. In this paper, we show the results of two nanocalorimetric experiments. The first one is related to the measurement of specific heat on ultra-thin...

Well-ordered ultrathin ZnO(0001) films were grown on Pt(111) in a layer-by-layer mode. The reactivity of the films as a function of the film thickness and coverage was examined by the CO oxidation reaction at near-atmospheric pressures. At low temperatures ( 450 K), CO2 production is found to be much higher on the films of partial coverage than on dense ZnO(0001) films and bare Pt(111). Under r...