We analyze the two-dimensional electron gas (2DEG) heating by incident terahertz (THz) radiation in field-effect transistor (FET) structures with graphene channels (GCs) and black-phosphorus black-arsenic gate barrier layers (BLs). Such GC-FETs can operate as bolometric THz detectors using thermionic emission of hot electrons from GC via BL into gate. Due to excitation plasmonic oscillations si...

An emerging electronic material as one of transition metal dichalcogenides (TMDCs), tungsten disulfide (WS2) can be exfoliated as an atomically thin layer and can compensate for the drawback of graphene originating from a gapless band structure. A direct bandgap, which is obtainable in single-layer WS2, is an attractive characteristic for developing optoelectronic devices, as well as field-effe...

We demonstrate an integrated module of self-powered ferroelectric transistor memory based on the combination of a ferroelectric FET and a triboelectric nanogenerator (TENG). The novel TENG was made of a self-assembled polystyrene nanosphere array and a poly(vinylidene fluoride) porous film. Owing to this unique structure, it exhibits an outstanding performance with an output voltage as high as ...

The development of field-effect transistor-based (FET-based) non-volatile optoelectronic memories is vital toward innovations necessary to improve computer systems. In this work, for the first time, unique charge-trapping and charge-retention properties solution-processed colloidal nitrogen-doped carbon quantum dots (CQDs) are harnessed achieve functional programmable by UV illumination with a ...

A field-effect transistor ~FET! with a channel length of ;100 nm was constructed from a small number of individual V2O5 fibers of the cross section 1.5 nm310 nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to...

Abstract The work aims to improve the current and conductance characteristics of Molybdenum ditelluride Black phosphorene in a novel 2D Field Effect transistor for different thickness level oxide from 1 nm 10 nm. Materials Methods: channel-based was chosen as two groups having 16 samples each. were simulated by varying thickness. Reducing MOTE2 will lead increased characteristics. FET is obtain...

In this work, we demonstrated the logic gate design using pyrrole based single molecular field effect transistor (FET) for the first time. The semi empirical quantum transport method, which is applying non-equilibrium Green’s function (NEGF) in combination with self-consistent extended Huckel theory (SCEHT), has been adopted to study the charge transport characteristics of a modeled device. By ...

In recent years there has been great progress in applying FET-type biosensors for highly sensitive biological detection. Among them, the ISFET (ion-sensitive field-effect transistor) is one of the most intriguing approaches in electrical biosensing technology. Here, we review some of the main advances in this field over the past few years, explore its application prospects, and discuss the main...

We report a technique for the detection of aerosolized viruses. Conventional field-effect-transistor (FET)-based techniques use solution-based processes, thus require antibody binding to the detection region of the FET prior to the supply of the analyte. With the method described here, virus-antibody-bound particles are delivered to the FET during detection; therefore, neither a pre-treatment a...

An extended-gate field-effect-transistor (FET) sensor with a gold-sensing electrode, to which a gold-thiol bond could easily be applied, was developed for DNA detection. Because the gold electrode is located in a different area from the FET, it can be operated without a light-shielding box by masking only the FET. However, when the FET sensor is used in an aqueous solution, fluctuation of the i...