نتایج جستجو برای: field effect diode fed

تعداد نتایج: 2406486  

Laser diode beam divergence is the main parameter for beam shaping and fiber optic coupling. Increasing the waveguide layer thickness is the conventional method to decrease the beam divergence. In this paper, the broadened asymmetric waveguide is introduced to decrease the divergence without increasing the optical power. The asymmetric waveguide was used to shift the vertical optical field to n...

2003
Kai Huang William S. Bice Oscar Hidalgo‐Salvatierra

An in vivo dosimetry system that uses p-type semiconductor diodes with buildup caps was characterized for clinical use on accelerators ranging in energy from 4 to 18 MV. The dose per pulse dependence was investigated. This was done by altering the source-surface distance, field size, and wedge for photons. The off-axis correction and effect of changing repetition rate were also investigated. A ...

Journal: :Physical Review B 2022

We study the transport properties of a diffusive Josephson junction between two spin-split superconductors (SCs) made SC-ferromagnetic insulator bilayers on top three-dimensional topological insulator. derive corresponding Usadel equation describing quasiclassical Green's functions in these systems and first solve analytically weak-proximity case. demonstrate appearance an anomalous phase absen...

2009
Jingwei Wang Zhenbang Yuan Lijun Kang Kai Yang Yanxin Zhang Xingsheng Liu

High power diode lasers have found increased applications in pumping of solid state or fiber laser systems for industrial, military and medical applications as well as direct material processing applications. The non-linearity of the near-field of emitters (or the so called “smile” effect) in a laser diode array poses significant challenges in optical coupling and beam shaping and has become on...

Journal: :Nano letters 2008
A Iovan S Andersson Yu G Naidyuk A Vedyaev B Dieny V Korenivski

We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The ob...

2013
V. D. Ta R. Chen D. M. Nguyen H. D. Sun

Related Articles Bihydrogel particles as free-standing mechanical pH microsensors Appl. Phys. Lett. 102, 031901 (2013) Tunnel-field-effect-transistor based gas-sensor: Introducing gas detection with a quantum-mechanical transducer Appl. Phys. Lett. 102, 023110 (2013) Interface states in metal-insulator-semiconductor Pt-GaN diode hydrogen sensors J. Appl. Phys. 113, 026104 (2013) An experimental...

2003
Mark Stephen Aleksey Vasilyev

High-power laser diode arrays are used for a variety of space-based laser programs as an energy source for diode-pumped solid-state lasers. Specifically, 1064 nm Nd:YAG lasers require laser diode arrays emitting at a wavelength of 808 nm that operate at quasi-cw peak powers of 100 Watts per bar. Reliability and performance data is needed for these components; particularly for operation in a sat...

Journal: :Physics in medicine and biology 2015
T S A Underwood J Thompson L Bird A J D Scott P Patmore H C Winter M A Hill J D Fenwick

Standard commercial diode detectors over-respond within small radiation fields, an effect largely attributable to the relatively high mass-density of silicon. However, Monte Carlo studies can be used to optimise dosimeter designs and have demonstrated that 'mass-density compensation'-for example, introducing a low-density air-gap upstream of a diode's high-density silicon volume-can substantial...

2017
Venkatramana Reddy P. Venkateswara Reddy

During the past years, the investigations for Diluted Magnetic Semiconductor (DMS) nanomaterials have attracted considerable attention due to their novel properties and broad application prospects in diverse areas, such as logic devices, spin polarized light emitting diode, spin field-effect transistors, field-emission devices, optical isolator, non-volatile memory devices and quantum computer,...

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