GaAs etch characteristics like etch rate, etch profile sidewall angle, etch surface morphology and selectivity are studied as a function of Inductively Coupled Plasma (ICP) power and Cl2/BCl3 flow rate ratio in ICP at low pressure (<15mTorr) and low RF bias power (<100W) regime to achieve moderate GaAs etch rate with an-isotropic profiles and smooth surface morphology. The low pressure regime e...

Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching ...

For various fluorocarbon processing chemistries in an inductively coupled plasma reactor, we have observed relatively thick ~2–7 nm! fluorocarbon layers that exist on the surface during steady state etching of silicon. In steady state, the etch rate and the surface modifications of silicon do not change as a function of time. The surface modifications were characterized by in situ ellipsometry ...

We study the effects of plasma etching on the evolution of surface roughness of GaN and AlN. The etch-induced roughness is investigated using atomic force microscopy by systematically varying plasma power, chamber pressure, and Cl2 /Ar mixture gas composition. GaN etches three to four times more rapidly than AlN for identical plasma conditions. For both GaN and AlN, we find that the surface rou...

The bulk etch rate for CR-39 in NaOH/ethanol was faster than those in aqueous solution of NaOH (NaOH/H2O). Furthermore, a layer of precipitate always accumulates on the surface of CR-39 detector during etching in NaOH/ethanol, which is absent during etching in NaOH/H2O. In the present work, mass spectrometry results have shown that the same etched products are present in the etchants of NaOH/H2...

CH3I vapor etching of masked and patterned GaAs substrates has been experimentally investigated. For GaAs samples masked with silicon nitride stripes that are wider than 30 tzm, the etch depth increased compared to unmasked samples, the magnitude of which increased with increasing mask width. Etching of bulk substrates of (l l l)Ga and (lll)As GaAs revealed a dependence of etch rate on crystal ...

The paper proposes to use the discharge energy for synthesis of chemically active particles in order correct shape and aspherize surface optical elements by reactive ion-beam etching. A stand was assembled on basis a radio frequency source accelerated ions KLAN-105M, design which allows working with gases. possibility increasing etching rate fused quartz more than 5 times compared ion inert gas...

This paper reports on the generation of spatially confined plasmas and their application to silicon etching. The etching is performed using SF6 gas and dc power applied between thin-film electrodes patterned on the silicon wafer to be etched. The electrodes also serve as a mask for the etching. The typical operating pressure and power density are in the range of 1–20 Torr and 1–10 W/cm, respect...

Tin Sn has the advantage of delivering higher conversion efficiency compared to other fuel materials e.g., Xe or Li in an extreme ultraviolet EUV source, a necessary component for the leading next generation lithography. However, the use of a condensable fuel in a lithography system leads to some additional challenges for maintaining a satisfactory lifetime of the collector optics. A critical i...