Improvements in dentin bonding systems have influenced modern restorative dentistry. The desire for minimal invasiveness has resulted in more-conservative cavity design, which basically relies on the effectiveness of current dentin bonding systems. Interaction of adhesives with enamel and dentin is based on two systems, commonly described as etch-and-rinse and self-etch. Priming and bonding age...

The inductively coupled plasma etching characteristics of Co2MnSi thin films patterned using a TiN hard mask were investigated by the addition of CH3OH to Ar gas. As the CH3OH concentration increased, the etch rates of Co2MnSi magnetic thin films and TiN hard mask decreased, but the etch profile improved. The effects of rf power, dc-bias voltage and gas pressure on the etch rate and etch profil...

Objective: To compare the retention and marginal discoloration of Self-etch Total Etch Adhesive during Pit Fissure Sealant application at 1 month, 3 months, 6 12 months. Materials methods: 30 school-going children received sealants in all four permanent second molars, carried out Department Pedodontics Preventive Dentistry. The fully erupted molars were randomly allocated into groups: group A (...

STATEMENT OF THE PROBLEM In the sandwich technique, the undesirable bond between the composite resin and glass-ionomer cement (GIc) is one of the most important factors which lead to the failure of restoration. Total-etch and self-etch adhesives may improve the bond strength based on their pH. PURPOSE The purpose of this study was to evaluate the shear bond strength between the nanofilled com...

A gas-phase, room-temperature, plasmaless isotropic etching system has been used for bulk and thin lm silicon etching. A computer controlled multi-chambered etcher is used to provide precisely metered pulses of xenon di uoride (XeF2) gas to the etch chamber. Etch rates as high as 15 microns per minute have been observed. The etch appears to have in nite selectivity to many common thin lms, incl...

GaAs etch characteristics like etch rate, etch profile sidewall angle, etch surface morphology and selectivity are studied as a function of Inductively Coupled Plasma (ICP) power and Cl2/BCl3 flow rate ratio in ICP at low pressure (<15mTorr) and low RF bias power (<100W) regime to achieve moderate GaAs etch rate with an-isotropic profiles and smooth surface morphology. The low pressure regime e...

Grass’ formation is the very common defects for via etch process when using a BCl3/Cl2 as basic gases in an inductively coupled plasma (ICP) system. Presence of grass can potentially degrade device performance due to poor metallization coverage. In this study we found that grass formation strongly depends on GaAs surface condition prior to etch. Any surface contaminants, such as photo resist re...

This literature review article addresses the types and the main components of different etch-and-rinse and self-etch adhesive systems available in the market, and relates them to their function, possible chemical interactions and influence of handling characteristics. Scanning electron microscopy (SEM) images are presented to characterize the interface between adhesives and dentin. Adhesive sys...

This paper reflects on the state of the art of self-etch adhesives anno 2010. After presenting the general characteristics of self-etch adhesives, the major shortcomings of the most simple-to-use one-step (self-etch) adhesives are addressed. Special attention is devoted to the AD-concept and the benefit of chemical interfacial interaction with regard to bond durability. Finally, issues like the...

At Skyworks Solutions throughput of the back side through-wafer via etch process was low because of a high rework rate. The high rework rate was due to an organic residue blocking the etch. A process was first developed to remove the residue and then integrated into the via etch process. The optimized via etch process resulted in a reduction in reworks and a significant increase in process thro...