Two new electrostatic discharge (ESD) protection design by using only 1 × VDD low-voltage devices for mixedvoltage I/O buffer with 3 × VDD input tolerance are proposed. Two different special high-voltage-tolerant ESD detection circuits are designed with substrate-triggered technique to improve ESD protection efficiency of ESD clamp device. These two ESD detection circuits with different design ...

This paper describes an electro-mechanical auto-calibration technique for use in capacitive MEMS accelerometers. Auto-calibration is achieved using the combined information derived from an initial measurement of the resonance frequency and the measurement of the pull-in voltages during device operation, with an estimation of process-induced variations in device dimensions from layout and deviat...

We propose a biosensor by exploiting localized plasmons in graphene and biomolecule adsorption on it. Numerical simulations demonstrate that the sensitivity of such a device can achieve a high value of up to 1697 nm/RIU (refractive index unit) when the wavelength shift at the plasmon resonance is detected. The transparent substrate supporting graphene can be chosen potentially from a wide range...

The design of RF MEMS switches involves several disciplines: mechanics, materials science and electrical engineering. While significant progress has been made in the RF design of the switches, mechanical and material studies are required for mass commercialization of reliable devices. Senturia and co-workers at MIT have presented a closed form solution to describe the electromechanical behavior...

Graphene holds a great promise for number of diverse future applications, in particular related to its easily tunable doping and Fermi level by electrostatic gating. However, as today, most implementations rely on electrical via the application continuous large voltages maintain desired doping. We show here how graphene can be implemented with conventional semiconductor flash memory technology ...

To mitigate the radio-frequency (RF) performance degradation caused by electrostatic discharge (ESD) protection device, low capacitance (low-C) design on ESD protection device is a solution. With the smaller layout area and small parasitic capacitance under the same ESD robustness, silicon-controlled rectifier (SCR) device has been used as an effective on-chip ESD protection device in RF ICs. I...

A device representing a basic building block for clocked quantum-dot cellular automata architecture is reported. Our device consists of three floating micron-size metal islands connected in series by two small tunnel junctions where the location of an excess electron is defined by electrostatic potentials on gates capacitively coupled to the islands. In this configuration, the middle dot acts a...

A novel electrostatic discharge (ESD) protection device with a threshold voltage of 0V for complementary metal-oxide semiconductor (CMOS) integrated circuits in sub-quarter-micron CMOS technology is proposed. Quite different to the traditional ESD protection devices, such an active ESD device is originally standing in its turn-on state when the IC is zapped under ESD events. Therefore, such an ...

Graphene has captured the imagination of researchers worldwide as an ideal two-dimensional material with exceptional electrical transport properties. The high electron and hole mobility quickly inspired scientists to search for electronic applications that require high-performance channel materials. However, the absence of a bandgap in graphene immediately revealed itself in terms of ambipolar ...

We present and review dopant mapping examples in semiconductor device structures by electron holography and outline their potential applications for experimental investigation of two-dimensional (2D) dopant diffusion on the nanometer scale. We address the technical challenges of the method when applied to transistor structures with respect to quantification of the results in terms of the 2D p-n...