This project presents a high-throughput and ultralowpower asynchronous domino logic pipeline design method, targeting to latch-free and extremely fine-grain or gate-level design. The data paths are composed of a mixture of dual-rail and single-rail domino gates. Dual-rail domino gates are limited to construct a stable critical data path. Based on this critical data path, the handshake circuits ...

This contribution describes a comprehensive comparison of bit parallel nite eld multipliers. Four diierent multipliers in standard, dual, and normal base together with a relatively new approach which uses composite elds are compared. Four diierent eld orders from 2 8 to 2 32 are investigated. A high practical relevance is assured by using a highly automated design process and sea-of-gates chip ...

Two-dimensional layered semiconductors present a promising material platform for band-to-band-tunneling devices given their homogeneous band edge steepness due to their atomically flat thickness. Here, we experimentally demonstrate interlayer band-to-band tunneling in vertical MoS2/WSe2 van der Waals (vdW) heterostructures using a dual-gate device architecture. The electric potential and carrie...

The SOI MOSFET technique is used to overcome the scaling effects. In this work, 20nm SOI MOSFET using Poly silicon as gate material of both Ntype and P-type were designed. The same SOI MOSFET is designed using Molybdenum as gate material for both N-type and P-type and the device characteristics werecompared and analysed.

A dual-gate InSb nanosheet field-effect device is realized and used to investigate the physical origin controllability of spin-orbit interaction in a narrow bandgap semiconductor nanosheet. We demonstrate that by applying voltage over dual gate, efficiently tuning can be achieved. also find presence an intrinsic at zero identify its as build-in asymmetry layer structure. Having strong controlla...

In this work, we statistically examine the emerging high/ metal gate work-function fluctuation (WKF) induced threshold voltage (Vth) fluctuations in 16-nm-gate MOSFET devices. Our Monte-Carlo model extensively evaluates the impact of WKF for different technology node, metal grain size, and gate material. This model provides us to identify suitable materials and fabrication processes that can si...