A novel 3D field effect transistor on SOI – screen-grid FET (SGrFET) – is proposed and an analysis of its DC behaviour is presented by means of 2D TCAD analysis. The novel feature of the SGrFET is the design of 3D insulated gate cylinders embedded in the SOI body. This novel gate topology improves efficiency and allows great flexibility in device and gate geometry to optimize DC performance. Th...

In this work, we investigate the performance of 18nm gate length AlInN/GaN Heterostructure Underlap Double Gate MOSFETs, using 2D Sentaurus TCAD simulation. The simulation is done using the hydrodynamic model and interface traps are also considered. Due to large twodimensional electron gas (2DEG) density and high velocity, the maximal drain current density achieved is very high. Extensive devic...

The low frequency noise in Silicon Nanowire Field Effect Transistors is analyzed by characterizing the gate electrode dependence on various geometrical parameters. It shows that gate electrodes have a strong impact in the flicker noise of Silicon Nanowire Field effect transistors. Optimization of gate electrode was done by comparing different performance metrics such a DIBL, SS, Ion / Ioff and ...

The lateral band-to-band tunneling (L-BTBT) leakage mechanism increases the OFF state current and prevents junctionless transistor from scaling. effect of L-BTBT on FIN shaped gate Junctionless field transistor(JLFET) with ground plane (GP) in oxide has been investigated. proposed device is simulated using 3-D Silvaco TCAD shows that it can mitigate leads to efficient volume depletion which rel...

High-performance inversion-type enhancement-mode (E-mode) nchannel MOSFETs on In-rich InGaAs using ALD Al2O3 as high-k gate dielectrics are demonstrated. The maximum drain current, peak transconductance, and the effective electron velocity of 1.0 A/mm, 0.43 S/mm and 1.0x10 cm/s at drain voltage of 2.0 V are achieved at 0.75-μm gate length devices. The device performance of In-rich InGaAs NMOSFE...

We demonstrate dramatic breakdown behavior in the current through GaAs/AlGaAs nanoconstrictions (NCs), and find that this exhibits multiple signatures characteristic of the Gunn effect. These include current fluctuations and hysteresis, and electroluminescence that are consistent with the formation of Gunn domains. An analytical model is developed to describe the current–voltage characteristics...

Recently, gate-all-around (GAA) nanowire field effect transistors (NWFETs) have attracted increasing attention due to their superior gate control and short channel effect immunity [1-4]. However, confined by the limitation of manufacturing process, the different aspect ratio (AR) results in different shapes of channel cross section, such as ellipse-shaped or rectangular-shaped instead of the id...

Device miniaturization is an important part of VLSI design, which refers to reduction in dimension of device by keeping all other characteristic constant. As technology node is moving in submicron region, the performance of the device degrades due to short channel effects and narrow channel effects. The key issues due to these effects are draininduced-barrier– lowering (DIBL), leakage current, ...

In this paper for the first time we report a study on the small signal characterization and simulation of Single Halo (SH) thin film SOI nMOSFETs. The single halo structure has a high pocket impurity concentration near the source end of the channel and low impurity concentration on the drain side. Besides having excellent dc output characteristics, better Vth – L roll-off control, low DIBL, hig...