In this article, a low-power hydrogen (H2) gas sensor has been proposed using two-dimensional (2D) material based Double Gate Field Effect Transistor (2D-FET). It is imperative to highlight that the conventional three-dimensional (3D) materials cannot be scaled down an ultra-low dimension due presence of dangling bonds, surface roughness scattering etc. This creates major challenge in developin...

An optimum design with silicon-on-insulator (SOI) device structure was proposed to eliminate back gate bias effect of the lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOSFET) and to improve breakdown voltage. The SOI structure was characterized by low doping buried layer (LDBL) inserted between the silicon layer and the buried oxide layer. The LDBL thickness is a...

Control of coupling of dopant atoms in silicon nanostructures is a fundamental challenge for dopant-based applications. However, it is difficult to find systems of only a few dopants that can be directly addressed and, therefore, experimental demonstration has not yet been obtained. In this work, we identify pairs of donor atoms in the nano-channel of a silicon field-effect transistor and demon...