We demonstrate the advantages of dual-gate polysilicon nanoribbon biosensors with a comprehensive evaluation of different measurement schemes for pH and protein sensing. In particular, we compare the detection of voltage and current changes when top- and bottom-gate bias is applied. Measurements of pH show that a large voltage shift of 491 mV pH(-1) is obtained in the subthreshold region when t...

The performance of nondeterministic nonlinear gates in linear optics relies on the photon counting scheme being employed and the efficiencies of the detectors in such schemes. We assess the performance of the nonlinear sign gate, which is a critical component of linear optical quantum computing, for two standard photon counting methods: the double detector array and the visible light photon cou...

Using a three-dimensional semiclassical model, we study double ionization for strongly driven He fully accounting for magnetic field effects during the propagation in time. For linearly and slightly elliptically polarized laser fields, we show that recollisions and the magnetic field combined act as a gate. This gate favors more transverse—with respect to the electric field— initial momenta of ...

We demonstrate gate control of the electronic g tensor in single and double quantum dots formed along a bend in a carbon nanotube. From the dependence of the single-dot excitation spectrum on magnetic field magnitude and direction, we extract spin-orbit coupling, valley coupling, and spin and orbital magnetic moments. Gate control of the g tensor is measured using the splitting of the Kondo pea...

We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling t between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes th...

1 Light and quantum information 2 Photons as qubits, phase shifters, beam splitters, polarization rotations, polarizing beam splitters, interferometers. 2 Two-qubit gates and the KLM scheme 6 Two-photon entanglement, the KLM approach, Clifford operations, two-photon interference, Hong-Ou-Mandel effect, fusion gates. 3 Cluster states 13 From circuits to clusters, single-qubit gates, two-qubit ga...

An analytically compact model for the nano-scale double gate MOSFET based on McKelvey’s flux theory is developed. The model is continuous above and below threshold and from the linear to saturation regions. Most importantly, it describes nano-scale MOSFETs from the diffusive to ballistic regimes. In addition to its use in exploring the limits and circuit applications of double gate MOSFETs, the...

We present an analytical and continuous dc model for undoped cylindrical surrounding double-gate (CSDG) MOSFETs for which the drain current and subthreshold model is written as an explicit function of the applied voltages for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. The model is based on a unified charge control model developed for thi...

Nanosystems are large-scale integrated systems exploiting nanoelectronic devices. In this study, we consider double independent gate, vertically stacked nanowire field effect transistors (FETs) with gate-all-around structures and typical diameter of 20 nm. These devices, which we have successfully fabricated and evaluated, control the ambipolar behaviour of the nanostructure by selectively enab...

The limits on scaling suggest the technology advancement for the solid-state devices. The double-gate (DG) MOSFET has emerged as an alternative device structure due to the certain significant advantages, i.e. increase in mobility, ideal sub-threshold slope, higher drain current, reduced power consumption and screening of source end of the channel by drain electric field (due to proximity to the...