Vertically coupled quantum dots have emerged as promising structures for various applications such single photon sources, entangled pairs, computation, and cryptography. We start with a structure composed of two vertically GaAs conical surrounded by AlxGa1−x, the effects applied electric magnetic fields on energies are evaluated using finite element method. In addition, including presence shall...

We investigate the behavior of impurity fields immersed in a larger condensate field in various dimensions. We discuss the localization of a single impurity field within a condensate and note the effects of surface energy. We derive the functional form of the attractive condensate-mediated interaction between two impurities. Generalizing the analysis to N impurity fields, we show that within va...

We study an Anderson impurity in a semiconducting host using the density matrix renormalization group technique. We use the U = 0 one–dimensional Anderson Hamiltonian at half filling as the semiconducting host since it has a hybridization gap. By varying the hybridization of the host, we can control the size of the semiconducting gap. We consider chains with 25 sites and we place the Anderson i...

This paper presents an analysis of the motion of an neutral impurity species in a nanometer scale 4He cluster, extending a previous study of the dynamics of an ionic impurity. It is shown that for realistic neutral impurity–He potentials, such as those of SF6 and OCS, the impurity is kept well away of the the surface of the cluster by long range induction and dispersion interactions with He, bu...

This paper presents an analysis of the motion of an neutral impurity species in a nanometer scale 4He cluster, extending a previous study of the dynamics of an ionic impurity. It is shown that for realistic neutral impurity–He potentials, such as those of SF6 and OCS, the impurity is kept well away of the the surface of the cluster by long range induction and dispersion interactions with He, bu...

This paper presents an analysis of the motion of a neutral impurity species in a nanometre scale He cluster, extending a previous study of the dynamics of an ionic impurity. It is shown that for realistic neutral impurity± He potentials, such as those of SF6 and OCS, the impurity is kept well away from the surface of the cluster by long range induction and dispersion interactions with He, but t...

The paper deals with two-dimensional stationary energy models for semiconductor devices, which contain incompletely ionized impurities. We reduce the problem to a strongly coupled nonlinear system of four equations, which is elliptic in nondegenerated states. Heterostructures as well as mixed boundary conditions have to be taken into account. For boundary data which are compatible with thermody...

Using an asymptotic solution of the M -impurity thermodynamics of a dilute s-d system, the impurity energy and impurity heat capacity ∆C(T ) are derived for dilute magnetic alloys with spin 1/2 and spin 3/2 impurities. The parameters which enter ∆C are adjusted to fit experimental data on impurity heat capacity of CuCr and (La1−xCex) Al2. Agreement is satisfactory for CuCr, at temperatures belo...

Acceptor impurity doping is recognized as a functional tool to extend the capabilities and applications of β-Ga2O3. The effect thermal annealing on photoexcited carriers was characterized by measuring photocurrent spectra nitrogen (N)-ion-implanted β-Ga2O3 crystals, where N found cause less crystal damage much lower diffusivity than Mg. intensity at 4.5–5.5 eV showed an increase with in externa...

Nitrogen (N) doping engineering is considered a promising approach to achieve p-type conductivity of Ga2O3 films. However, the defect self-compensation effect has been major obstacle in this field. In work, we propose straightforward and environmentally friendly strategy obtain doped surface on β-Ga2O3 films via nonthermal N plasma-based treatment. By substituting nitrogen with oxygen, acceptor...