Using dielectric-constant (ε) matching of metal-oxide (MO) with Ag film, highly transparent MO/Ag electrodes are demonstrated. At the large-ε MO/Ag interface, surface-plasmon was suppressed and the film showed increased optical-transmittance (>70%). OLEDs fabricated using large-ε MO/Ag electrodes show 1.38 times greater luminance than that of devices with small-ε MO/Ag.

Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively reduce the gate thickness further due to the poly-depletion effect. Fully silicided metal gate (FUSI) has been proven to be a promising solution. FUSI metal gate can significant...

a theory is presented for the dispersion relations of the nonlinear phonon-polaritons arising when phonons are coupled to the electromagnetic waves in multilayered structures of nonlinear materials. the calculations are applied to a multilayered structure consisting of a thin film surrounded by semi-infinite bounding media where each layer may have a frequency dependent dielectric function and ...

The effects of dielectric-annealing gas (O2, N2 and NH3) on the electrical characteristics of amorphous InGaZnO thin-film transistor with HfLaO gate dielectric are studied in-depth, and improvements in device performance by the dielectric annealing are observed for each gas. Among the samples, the N2-annealed sample has a high saturation carrier mobility of 35.1 cm 2 /V∙s, the lowest subthresho...

High-performance and low-temperature-compatible solid phase crystallized polycrystalline silicon thin film transistors using thermal oxide buffered aluminum oxide (Al2O3) as gate dielectric are demonstrated. By growing a thermal oxide buffer layer using two-step annealing method, the interface quality is greatly improved, resulting in excellent device performance.

Benjamin A. Mazin, Daniel Sank, Sean McHugh, Erik A. Lucero, Andrew Merrill, Jiansong Gao, David Pappas, David Moore, and Jonas Zmuidzinas Department of Physics, University of California–Santa Barbara, Santa Barbara, California 93106-9530, USA National Institute of Standards and Technology, Boulder, Colorado 80305-3328, USA Department of Physics, California Institute of Technology, Pasadena, Ca...

We propose and numerically investigate a novel perfect ultra-narrow band absorber based on a metal-dielectric-metal-dielectric-metal periodic structure working at near-infrared region, which consists of a dielectric layer sandwiched by a metallic nanobar array and a thin gold film over a dielectric layer supported by a metallic film. The absorption efficiency and ultra-narrow band of the absorb...

To realize a high-temperature capacitor, uniaxially (001)-oriented CaBi4Ti4O15 films with various film thicknesses were prepared on (100)cSrRuO3/Ca2Nb3O10(-) nanosheet/glass substrates. As the film thickness decreases to 50 nm, the out-of-plane lattice parameters decrease while the in-plane lattice ones increase due to the in-plane tensile strain. However, the relative dielectric constant (εr) ...

We analyzed the high frequency dielectric relaxation mechanism in high-k composite materials using film substrates made of low loss organic resin filled with ferroelectric ceramics and with single wall carbon nanotubes (SWNT). We performed broadband permittivity measurements of high-k film substrates at frequencies of 100 Hz to about 10 GHz. In order to analyze the effect of the dielectric thic...