Single crystals of nonlinear optical material bis (guanidinium) hydrogen phosphate monohydrate (G2HP) belonging to non centrosymmetric space group P 21c were successfully grown by the slow evaporation method. Optical transmittance and second harmonic generation of the grown crystals have been studied by UV-vis-NIR spectrum and Kurtz powder technique respectively. The transmittance of G2HP cryst...

A simple and reliable method for quick estimation of the dielectric constant of a binary solvent mixture is proposed. The validity of the proposed method has been tested for a broad range of binary solvent mixtures

We report a unifying approach to the Goos-Hänchen (GH) shifts on external optical reflection for metals and dielectrics in particular for the case of high losses, that is for a large imaginary part of the dielectric constant. In this regime metals and dielectrics have a similar GH shift which is in contrast to the low-loss regime where the metallic and dielectric forms of the GH shift are very ...

The dielectric properties of layer perovskites in the Dion-Jacobson (KCa2Nb3O10, HCa2Nb3O10, CsPb2Nb3O10, HPb2Nb3O10, KCa2NaNb4O13, KLa2NbTi2O10) and Ruddlesden-Poppper (K2La2Ti3O10) series, and of related lamellar oxides (KTiNbO5, HTiNbO5) were measured. Most of these compounds show significant dielectric dispersion and high loss, which are attributed to both grain and grain boundary atomic di...

The paper discusses the design aspects of capacitive RF MEMS Symmetric Toggle Switch (STS) with particular emphasis on device compactness, reliability, and improvement in isolation & insertion loss by incorporating hafnium dioxide (HfO2) as a dielectric material. The major impact of the change from SiO2 to HfO2 having dielectric constant of 20, is the reduction in overall dimensions of the swit...

Dielectric enhancement was observed in polycrystalline BaTiO3/Ba0.6Sr0.4TiO3 multilayered thin films deposited layer-by-layer on Pt/Ti/SiO2/Si substrates via pulsed laser deposition. The dielectric constant of the films was enhanced more than four times with the decrease of the individual layer thickness down to 30 nm, while the dielectric loss was kept at a low level comparable to that of the ...

The dc electric-field dependence of dielectric constant in the paraelectrics, KTaO3 single crystals, CaTiO3 and (Ln1/2Na1/2)TiO3 (Ln5La and Nd! ceramics is studied at cryogenic temperatures in the dc electric-field range 0–60 kV/cm. The results indicate that KTaO3 possesses a high tunability K$5@e(E0)2e(E)#/e(E0) 5;50%% at 20 kV/cm, and low dielectric loss tan d (;0.003); while CaTiO3 and (Ln1/...

The dielectric behavior of SrTiO3 thin films prepared by the pulsed-laser deposition technique on SrTiO3 single-crystal substrates is studied under dc electric field. A high dielectric constant maximum «max(;2280) and a low-loss tan d (;0.001) are obtained. Compared with the observation in SrTiO3 single crystals, an additional dielectric loss peak with frequency dispersion is observed around 15...

The dielectric behavior of SrTiO3 single crystals under high dc electric field ~up to 50 kV/cm! is reported in this letter. The rounded dielectric constant peaks are induced by the application of dc bias, and the corresponding dielectric losses are observed. The results show that dielectric loss under dc bias consists of several components coming from ‘‘defects mode’’ and ‘‘induced mode.’’ The ...

Conductivity exhibiting power-law frequency response with an exponent of unity leads to frequency-independent dielectric loss. Such constant-loss ~CL! behavior is not physically realizable over a nonzero frequency range, and approximate expressions that have been used to represent it are inconsistent with the Kronig–Kramers relations. Response models are proposed and investigated that do satisf...