a r t i c l e i n f o The amorphization and graphitization of single-crystal diamond by ion implantation were explored using transmission electron microscopy (TEM). The effect of ion implantation and annealing on the microstructure was studied in (100) diamond substrates Si + implanted at 1 MeV. At a dose of 1 × 10 15 cm − 2, implants done at 77 K showed a damage layer that evolves into amorpho...

342 NATURE | VOL 399 | 27 MAY 1999 | www.nature.com A micro-Raman spectrometer was used for the further characterization of the deposited diamond. A laser beam of 1-mm spot size was focused onto the crystallites. Figure 3 shows the resulting Raman spectrum: it exhibits a first-order diamond peak centred at 1,332.8 cm. The high intensity of the diamond peak, its small full-width at half-maximum ...

The impressively low friction and wear of diamond in humid environments is debated to originate from either the stability of the passivated diamond surface or sliding-induced graphitization/rehybridization of carbon. We find ultralow friction and wear for ultrananocrystalline diamond surfaces even in dry environments, and observe negligible rehybridization except for a modest, submonolayer amou...

Microand nanomachining of diamond using focused ion beam (FIB) continues to generate interest in applications such as diamond anvil cells, photonic devices, micro-cantilevers and tools for imprinting applications [1,2]. However, the milling rate of diamond by FIB is approximate 4X slower when compared to silicon using 30 kV Ga FIB [3]. Recent instrumentation using PFIB technology and Xe ions of...

Silicon crystallizes in the diamond-cubic phase and shows only a weak emission at 1.1 eV. Diamond-hexagonal silicon however has an indirect bandgap at 1.5 eV and has therefore potential for application in opto-electronic devices. Here we discuss a method based on advanced silicon device processing to form diamond-hexagonal silicon nano-ribbons. With an appropriate temperature anneal applied to ...

Deposition of heteroepitaxial diamond via microwave chemical vapor deposition has been performed on a 4H-SiC substrate using bias enhanced nucleation followed by a growth step. In future work, the diamond film will serve as a protective layer for an alpha particle sensor designed to function in an electrorefiner during pyroprocessing of spent fuel. The diamond deposition on the 4H-SiC substrate...

The hardness and virtual incompressibility of diamond allow it to be used in high-pressure anvil cell. Here we report a new way to generate static pressure by encapsulating single-crystal diamond with graphene membrane, the latter is well known for its superior nano-indentation strength and in-plane rigidity. Heating the diamond-graphene interface to the reconstruction temperature of diamond (~...

Silicon clusters with a diamond-like core and energetically competitive non-diamond clusters were comparatively studied using the nonconventional tight-binding molecular dynamics simulation method. Non-diamond clusters were constructed according to a quasi-onedimensional pentagon-based regular growth pattern. A non-trivial competition between surface and core reconstructions in the clusters, in...

We realize anti-reflection (AR) coatings for optical excitation and fluorescence measurements of nitrogen-vacancy (NV) color centers in bulk diamond by depositing quarter-wavelength thick silica layers on the diamond surface. These AR coatings improve NV-diamond optical measurements by reducing optical reflection at the diamond-air interface from 17% to 2%, which allows more effective NV optica...