نتایج جستجو برای: density of states dos
تعداد نتایج: 21340449 فیلتر نتایج به سال:
Structural, Electronic and Optical Properties of the Al2O3 Doped SiO2: First Principles Calculations
The doping effects of Al2O3 on SiO2 ( -cristobalite) have been studied by first principles calculations, with emphasis on the structural, electronic and optical properties. Compared to pure SiO2 crystal, the electronic density of states (DOS) of the Al2O3 doped SiO2 show significant changes. The electron energy states corresponding to the newly emerged sharp DOS peaks are found to exhibit local...
Abstract. We review the density of states and related quantities of quasi one-dimensional disordered Peierls systems in which fluctuation effects of a backscattering potential play a crucial role. The low-energy behavior of non-interacting fermions which are subject to a static random backscattering potential will be described by the fluctuating gap model (FGM). Recently, the FGM has also been ...
Electronic energy bands of ScH, in the fluorite structure have been calculated by the composite-wave variational version of the APW method. The crystal potential was constructed by superposition of the atomic potential of Herman and Skillman. From the band structure data the density of states (DOS), the joint DOS (JDOS) and the Fermi surface have been worked out. The results of the JDOS calcula...
We study the electronic structure of Mott-Hubbard systems SrVO3 and CaVO3 with bulk and surface-sensitive high-resolution photoemission spectroscopy, using a vacuum ultraviolet laser, synchrotron radiation, and a discharge lamp (hv = 7-21 eV). A systematic suppression of the density of states (DOS) within approximately 0.2 eV of the Fermi level (EF) is found on decreasing photon energy, i.e., o...
We consider the single particle relaxation rate of 2D electrons subject to a random magnetic field. The density of states (DOS) oscillations in a uniform magnetic field (in addition to a random one) are studied. It is shown that the infrared singularities appearing in perturbation theory for the single particle relaxation rate are spurious and can be regularized by a proper choice of gauge. We ...
We report phonon densities of states (DOS) of iron measured by nuclear resonant inelastic x-ray scattering to 153 gigapascals and calculated from ab initio theory. Qualitatively, they are in agreement, but the theory predicts density at higher energies. From the DOS, we derive elastic and thermodynamic parameters of iron, including shear modulus, compressional and shear velocities, heat capacit...
The results of ab-initio calculations of electronic structure of Laves-phase compounds Al2Ca, Be2Ag and Be2Ti are presented. Calculations were carried out in the framework of Density Functional Theory (DFT) and the Full Potential Linearized Augmented Plane Waves + local orbital formalism (FP APW+lo). Total, local and partial densities of electronic states (DOS) were obtained and analysed. These...
Interlayer tunneling resistivity is used to probe the low-energy density-of-states (DOS) depletion due to the pseudogap in the normal state of Bi2Sr2CaCu2O8+y. Measurements up to 60 T reveal that a field that restores DOS to its ungapped state shows strikingly different temperature and doping dependencies from the characteristic fields of the superconducting state. The pseudogap closing field a...
Spin-polarized band calculations for LaSr7B48 show a weak ferromagnetic state. This is despite a low density of states (DOS) and a low Stoner factor. The reason for the magnetic state is found to be associated with a gain in potential energy in addition to the exchange energy, as a spin splitting is imposed. A DOS with an impuritylike La band is essential for this effect. It makes a correction ...
We calculate numerically the spectrum of disordered electrons in the lowest Landau level at filling factor 1/5 using the self-consistent Hartree-Fock approximation for systems containing up to 400 flux quanta. Special attention is paid to the correct treatment of the q = 0 component of the Coulomb interaction. For sufficiently strong disorder, the system is an insulator at this filling factor. ...
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