Crystallization is an important separation technology used for the purification of products during their final stages of manufacturing. Novel semi-continuous and continuous crystallization process designs are receiving increasing attention in pharmaceutical industry due to significant advantages in terms of process, operation and costs. This dissertation aims to develop mathematical models for ...

Single-crystal delafossite ${\mathrm{PdCoO}}_{2}$ is known to have an extremely low intrinsic impurity concentration of \ensuremath{\sim}0.001%, demonstrating extraordinarily high conductivity with a mean free path \ensuremath{\sim}20 \ensuremath{\mu}m at temperatures. However, when grown as thin films, the resistivity room temperature increases by factor 3--80 times, depending on film thicknes...

It has been shown that the introduction of thulium impurity into crystals strontium barium (SBN : 61) niobate leads to an increase in dielectric constant value and blur region phase transition. External field polarization partially stabilizes polar state samples, however, heterogeneous distribution across thickness studied samples indicates existence regions with a developed domain structure ch...

Iron inclusion in the composition of zeolite crystal structure endows it with new and useful properties. However, direct synthesis involving Fe, frequently creates unfavorable conditions that hinder crystallization process generate impurity phases. For this reason, novel methods, which include iron within zeolitic matrix, are being sought out. This article presents a one-pot iron-modified X. Th...

Resistivity is an intrinsic feature that specifies the electrical properties of a material and depends on electron-phonon scattering near room temperature. Reducing the resistivity of a metal to its potentially lowest value requires eliminating grain boundaries and impurities, but to date few studies have focused on reducing the intrinsic resistivity of a pure metal itself. We could reduce the ...

The thermoelectric properties of quasi-one-dimensional (Q1D) organic crystals with p-type conduction band are studied. Two main electron-phonon interaction mechanisms and carriers scattering on impurities are taken into account. The relaxation time as a function of carrier energy is analyzed for different values of crystal parameters. It is shown that under certain conditions, when the interfer...

The Czochralski method of the industrial production of a silicon single crystal consists of pulling up the single crystal from the silicon melt. The flow of the melt during the production is called the Czochralski flow. The mathematical description of the flow consists of a coupled system of six P.D.E. in cylindrical coordinates containing Navier-Stokes equations (with the stream function), hea...

Recent progress in the growth of high quality 6H-SiC single crystal leads to an ideal substrate material for GaN epitaxial films. Nearly matching lattice constants of wurzite GaN to 6H-SiC in the hexagonal plane can reduce strain effects at the interface. We employed the sublimation sandwich method to grow single crystal layers at reasonable growth rates with free carrier concentrations of 2x10...