A model of nonequilibrium charge recombination from an excited adiabatic state of a donor-acceptor complex induced by the nonadiabatic interaction operator is considered. The decay of the excited state population prepared by a short laser pulse is shown to be highly nonexponential. The influence of the excitation pulse carrier frequency on the ultrafast charge recombination dynamics of excited ...

We have successfully designed the geometry of the microwave cavity and the thin metal electrode, achieving resonance of the microwave cavity with the metal-insulator-semiconductor (MIS) device structure. This very simple MIS device operates in the cavity, where charge carriers are injected quantitatively by an applied bias at the insulator-semiconductor interface. The local motion of the charge...

The dynamics of charge transfer at interfaces are fundamental to the understanding of many processes, including light conversion to chemical energy. Here, we report imaging of charge carrier excitation, transport, and recombination in a silicon p-n junction, where the interface is well defined on the nanoscale. The recorded images elucidate the spatiotemporal behavior of carrier density after o...

Au was photoelectrochemically deposited onto cylindrical or tapered p-Si microwires on Si substrates to profile the photoinduced charge-carrier generation in individual wires in a photoactive semiconductor wire array. Similar experiments were repeated for otherwise identical Si microwires doped to be n-type. The metal plating profile was conformal for n-type wires, but for p-type wires was a fu...

The operational characteristics of capacitor-type detectors based on HPHT and CVD diamond have been investigated using perpendicular and parallel injection of carrier domain regimes. Simulations of the drift-diffusion current transients have been implemented by using dynamic models based on Shockley-Ramo's theorem, under injection of localized surface domains and of bulk charge carriers. The bi...

Hot-carrier degradation is associated with the buildup of defects at or near the silicon/silicon dioxide interfaced of a metal-oxide-semiconductor transistor. However, the exact location of the defects, as well as their temporal buildup during stress, is rarely studied. In this work we directly compare the experimental interface state density profiles generated during hot-carrier stress with si...

Thermoactivated electrical conductivity has been studied on nanofibers fabricated from the derivatives of perylene tetracarboxylic diimide (PTCDI) both in the dark and under visible light illumination. The activation energy obtained for the nanofibers fabricated from donor-acceptor (D-A) PTCDIs are higher than that for symmetric n-dodecyl substituted PTCDI. Such difference originates from the s...