We have implanted boron (B) ions (dosage: 5×1014 cm-2) into diamond and then hydrogenated the sample by implantating hydrogen ions at room temperature. A p-type diamond material with a low resistivity of 7.37 mΩ cm has been obtained in our experiment, which suggests that the hydrogenation of B-doped diamond results in a low-resistivity p-type material. Interestingly, inverse annealing, in which...

The lack of p-type lithium niobate limits it serving as an active material. A series of Mo-doped and pure congruent lithium niobate crystals were grown by Czochralski method under different polarization conditions. Their dominant carrier species were characterized by holographic experiment. The results showed dominant charge carrier species may be changed from electrons to holes when lithium ni...

Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical...

The transient interaction between a refraction index grating and light beams during simultaneous writing and thermal fixing of a photorefractive hologram is investigated. With a diffusionand photovoltaic-dominated carrier transport mechanism and carrier thermal activation (temperature dependent) considered in Fe:LiNbO3 crystal, from the standpoint of field-material coupling, the theoretical the...

A simple model that links MOSFET performance, in the form of intrinsic switch delay, to effective carrier velocity in the channel is developed and fitted to historical data. It is shown that nearly continuous carrier velocity increase, most recently via the introduction of process-induced strain, has been responsible for the device performance increase commensurately with dimensional scaling. T...

The temperature performance of type-II semiconductor lasers has been analyzed by comparing the temperature-concentration dependence for a charge-carrier subsystem at the threshold with steady-state temperature-concentration relationship implied by the carrier heating process. The low material gain characteristic of type-II heterostructures and the high resistance of the thermal link to the heat...

We explore the charged-impurity-scattering-limited mobility of electrons and holes in monolayer black phosphorus (BP), a highly anisotropic material. Taking full account of the anisotropic electronic structure in effective mass approximation, the zero-temperature momentum relaxation time and the charge carrier mobility are calculated based on the Boltzmann transport equation. For carrier densit...

The high carrier mobility and thermal conductivity of graphene make it a candidate material for future high-speed electronic devices. Although the thermal behaviour of high-speed devices can limit their performance, the thermal properties of graphene devices remain incompletely understood. Here, we show that spatially resolved thermal radiation from biased graphene transistors can be used to ex...

Audio information stored in the undulations of a groove in a mechanical sound carrier such as a cylinder or disc phonograph record may be reconstructed, without contact, by measuring the groove shape using precision optical metrology methods and digital image-processing. The viability of this approach was recently demonstrated on a 78r.p.m. shellac disc using two-dimensional image acquisition a...

The operation dynamics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models. The drift-diffusion current simulations have been implemented by employing the software package Synopsys TCAD Sentaurus. The monopolar and bipolar drift regimes have been analyzed by using dynamic models based on the Shockley-Ramo theorem. The ...