A low-power, low-phase-noise quadrature oscillator for Medical Implantable Communications Service (MICS) transceivers is presented. The proposed quadrature oscillator generates 349~689 MHz I/Q (In-phase and Quadrature) signals covering the MICS band. The oscillator is based on a differential pair with positive feedback. Each delay cell consists of a few transistors enabling lower voltage operat...

This paper presents an electrical stimulator with four high-voltage-tolerant output channels for cochlear implant in a 0.18μm low-voltage CMOS process. As the maximum stimulation voltage can be as high as 7 V, this stimulator only needs one single supply voltage of 1.8 V. To implement this stimulator in a low-voltage CMOS process, the dynamic bias technique and stacked MOS configuration are use...

A concise arrafytical expression for switch-induced error voltage on a switched capacitor is derived from the distributed MQSFET model. The result, however, can be interpreted in terms of a simple lumped equivalent circuit. With this expression we explore the dependence of the error voltage on process, switch turnoff rate, source resistance, and other circuit parameters. These results can be us...

Increased downscaling of CMOS circuits with respect to feature size and threshold voltage has a result of dramatically increasing in leakage current. So, leakage power reduction is an important design issue for active and standby modes as long as the technology scaling increased. In this paper, a simultaneous active and standby energy optimization methodology is proposed for 22 nm sub-threshold...

A novel voltage reference has been proposed and simulated using a 0.18μm CMOS process in this paper. A near-zero temperature coefficient voltage is achieved in virtue of the bias voltage subcirciut which consists of two MOSFETs operating in the saturation region. The kind of bias voltage subcirciut is used to adjust the output voltage and compensate the curvature. The output voltage is equal to...

"Load-locked dc high voltage GaAs photogun with an inverted-geometry ceramic insulator" (2010). A new dc high voltage spin-polarized photoelectron gun has been constructed that employs a compact inverted-geometry ceramic insulator. Photogun performance at 100 kV bias voltage is summarized.

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scanning impedance microscopy (sim) is one of the novel scanning probe microscopy (spm) techniques, which has been developed to taking image from sample surface, providing quantitative information with high lateral resolution on the interface capacitance, and investigating the local capacitance–voltage (c–v) behavior of the interface and ac transport properties. the sim is an ordinary afm equip...