نتایج جستجو برای: beta emitter

تعداد نتایج: 192494  

2015
Hirohiko Fukagawa Takahisa Shimizu Taisuke Kamada Shota Yui Munehiro Hasegawa Katsuyuki Morii Toshihiro Yamamoto

Organic light-emitting diodes (OLEDs) have been intensively studied as a key technology for next-generation displays and lighting. The efficiency of OLEDs has improved markedly in the last 15 years by employing phosphorescent emitters. However, there are two main issues in the practical application of phosphorescent OLEDs (PHOLEDs): the relatively short operational lifetime and the relatively h...

1999
A. ZASLAVSKY R. W. JOHNSON R. PILLARISETTY JUN LIU

Previously we demonstrated a new class of VLSI-compatible multiemitter Si/SiGe/Si npn HBTs with enhanced logic functionality. These devices have two (or more) emitter contacts and no base contact. Given a potential difference between any two emitter contacts, one of the emitter-base junctions is forward biased and injects electrons into the base, while the other junction is reverse biased and s...

2016
Zhutian Yang Wei Qiu Hongjian Sun Arumugam Nallanathan

Due to the increasing complexity of electromagnetic signals, there exists a significant challenge for radar emitter signal recognition. To address this challenge, multi-component radar emitter recognition under a complicated noise environment is studied in this paper. A novel radar emitter recognition approach based on the three-dimensional distribution feature and transfer learning is proposed...

2016
Stephen A. Guerrera

Field emitter arrays (FEAs) are a promising class of cold electron sources with applications in RF amplifiers, terahertz sources, lithography, imaging, and displays. FEAs are yet to achieve widely implemented because of serious challenges which have limited their viability in systems that require advanced electron sources. We identified four major challenges that posed significant barriers to t...

Journal: :Nanotechnology 2015
Philip J Ponce de Leon Frances A Hill Eric V Heubel Luis F Velásquez-García

We report the design, fabrication, and characterization of planar arrays of externally-fed silicon electrospinning emitters for high-throughput generation of polymer nanofibers. Arrays with as many as 225 emitters and with emitter density as large as 100 emitters cm(-2) were characterized using a solution of dissolved PEO in water and ethanol. Devices with emitter density as high as 25 emitters...

2010
Zhonghai Wang Genshe Chen Erik Blasch Khanh Pham Robert Lynch

This paper presents a wideband jamming emitter localization method based on the fusion of multiple direction-ofarrivals (DOAs) and time-difference-of-arrival(s) (TDOA(s)) obtained from multiple unmanned-aerial-vehicles (UAVs). In this technique, we assume that multiple trajectory controllable UAVs are available and they are equipped with smart antennas to estimate the emitter’s angle (DOA) with...

Journal: :Optics express 2009
Eden Rephaeli Shanhui Fan

We present theoretical considerations as well as detailed numerical design of absorber and emitter for Solar Thermophotovoltaics (STPV) applications. The absorber, consisting of an array of tungsten pyramids, was designed to provide near-unity absorptivity over all solar wavelengths for a wide angular range, enabling it to absorb light effectively from solar sources regardless of concentration....

Journal: :J. Imaging 2016
Carmen Paniagua Gonzalo López-Nicolás Josechu J. Guerrero

Abstract: Traditionally, structured light methods have been studied in rigid configurations. In these configurations the position and orientation between the light emitter and the camera are fixed and known beforehand. In this paper we break with this rigidness and present a new structured light system in non-rigid configuration. This system is composed by a wearable standard perspective camera...

2001
M. Jagadesh Kumar

A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. A comprehensive comparison of the proposed structure with its equivalent Si lateral NPN BJT and an SiC emitter lateral NPN HBT is presented. Based on simulation results, the authors de...

2008
Fang-Yu Hong Shi-Jie Xiong

A symmetrical approach is suggested (Chang DE et al. Nat Phys 3:807, 2007) to realize a single-photon transistor, where the presence (or absence) of a single incident photon in a ‘gate’ field is sufficient to allow (prevent) the propagation of a subsequent ‘signal’ photon along the nanowire, on condition that the ‘gate’ field is symmetrically incident from both sides of an emitter simultaneousl...

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