نتایج جستجو برای: band gap diagram

تعداد نتایج: 321192  

Journal: :American Journal of Undergraduate Research 2008

The effect of evaporation rate on structural, morphological and optical properties of electron beam evaporated CdS thin films have been investigated. CdS thin film deposited by electron beam evaporation method in 12nm/min and 60nm/min evaporation rates on glass substrates. X-ray diffraction, scanning electron microscopy, UV-Vis-NIR spectroscopy and Atomic Force Microscopy were used to character...

K . Zare M. Monajjemi M. SeyedHosseini

To investigate the electromagnetic interaction of molecules inside the nanotubes, first, the structure of nanotubes B16N16 was optimized with hybrid density functional theory (B3LYP) using the EPR-II basis set, then Cu, Cu+, Cu++ were located in nanotube and we studied the total energy, band gap energy, electrical potential, changes of band gap energy in terms of total energy and dipole moment ...

Journal: :international journal of nanoscience and nanotechnology 2010
p. sharma s. singh h. s.virk

cadmium sulphide (cds) nanoparticles were prepared using microemulsion method using cadmium chloride as cadmium source and sodium sulphide as sulphur source. the obtained nanoparticles structures were characterized by x-ray diffraction (xrd) and transmission electron microscopy (tem) whereas optical characterization was done by ultra violet-visible absorption. xrd result shows that cds nanopart...

Journal: :international journal of nanoscience and nanotechnology 2007
n. jeyakumaran b. natarajan s. ramamurthy v. vasu

porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. sem, ftir and pl have been used to characterize the morphological and optical properties of porous silicon. the influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. it is observed that pore size increases with etching tim...

2010
M. El Kurdi S. Sauvage P. Boucaud G. Fishman

The k·p method is known to be very efficient to accurately describe either the conduction band or the valence band or even both of them in the vicinity of a given point of the Brillouin zone. Recently multiband k·p Hamiltonians including up to 30 bands (and above), which allow us to calculate the band diagram of bulk materials for Td or Oh group semiconductors, have been proposed [1]. The strai...

Journal: :Photonics Research 2018

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