Dry etching techniques employing ion beam induced surface reaction and the possibility of highly charged ion beam in dry etching are described, and the preliminary work on dry etching of GaAs using highly charged ion (HCI) is also presented. In usual dry etching, total etch rate is a summation of the physical sputtering rate, the chemical etching rate, and the ion-induced chemical etching rate....

Single-crystalline nanoporous Nb2O5 nanotubes were fabricated by a two-step solution route, the growth of uniform single-crystalline Nb2O5 nanorods and the following ion-assisted selective dissolution along the [001] direction. Nb2O5 tubular structure was created by preferentially etching (001) crystallographic planes, which has a nearly homogeneous diameter and length. Dense nanopores with the...

Porous Silica In article number 2206842, Stella Gries, Patrick Huber, and co-workers present a novel approach based on silver nanoparticle-assisted chemical etching (MACE) of macroporous silicon for the synthesis hierarchically porous silicon. The MACE process is mainly guided by metal-catalyzed redox-reaction where nanoparticles drill mesopores into scaffold structure. resulting can be transfo...

Black silicon (BSi) represents a very active research area in renewable energy materials. The rise of BSi as a focus of study for its fundamental properties and potentially lucrative practical applications is shown by several recent results ranging from solar cells and light-emitting devices to antibacterial coatings and gas-sensors. In this paper, the common BSi fabrication techniques are firs...

There are basically two ways to etch silicon: dry and wet chemical etching. In micromachining, the control of the shape of the structure is accomplished by anisotropic etching through mask openings. The anisotropy of wet chemical etching is related to the crystal structure of silicon, while that of dry etching stems from the momentum of ions impinging the substrate. The latter gives us much mor...