Aluminium and iron/steel are truly sustainable materials. As a result the global metallurgical industry strives to produce products, which contribute to the global effort by reducing resource use, recycling and reusing materials where possible, and to help create the economic and supply frameworks needed to do this. Aluminium is a material that is infinitely recyclable and remarkably plentiful....

The use of aluminum oxide as the gate insulator for low temperature (<600C) polycrystalline SiGe thin film transistors (TFTs) has been studied. The aluminum oxide was sputtered from a pure aluminum target using a reactive N20 plasma. The composition of the deposited aluminum oxide was found to be almost stoichiomertic (i.e. Al2O3), with a very small fraction of nitrogen incorporation. Even with...

The miniaturization of future electronic devices requires the knowledge of interfacial properties between two-dimensional channel materials and high-κ dielectrics in the limit of one atomic layer thickness. In this report, by combining particle-swarm optimization method with first-principles calculations, we present a detailed study of structural, electronic, mechanical, and dielectric properti...

We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3...

A study was performed to investigate the effect of increasing the Al or Al2O3 precursor content, above the stoichiometric amount, on the formation of β-sialon by pressureless sintering of Al, Si and Al2O3 powders in flowing nitrogen gas. The effect of adding Y2O3 or Fe to the precursor mixture, on the β-sialon formation, was also studied. The phase morphology and yield produced by the various c...

In and Ga impurities substitutional to Al in the oxide layer resulting from diffusion out of the substrate are identified as candidates for electron traps under inversion at In0.53Ga0.47As/Al2O3 interfaces. Through density-functional calculations, these defects are found to be thermodynamically stable in amorphous Al2O3 and to be able to capture two electrons in a dangling bond upon breaking bo...

The present work explores a novel method of waste heat recovery (WHR) from the internal combustion (IC) engine and power generation using hot exhaust gas (HEG) thermoelectric generator (TEG). This system uses TEGs aluminium oxide (Al2O3), bismuth telluride (Bi2Te3), lead (PbTe3), silicon germanium (SiGe) for investigation WHR generation. experiments were conducted 5.9 kW diesel as source exchan...

The behavior of variation dielectric constant with temperature solid solution Cadmium Acetate Cd(C2H3O2)2 Aluminium (III) Oxide Al2O3 and other parameters have been measured between the temperatures 35°C to 100°C using capacitance bridge model ZENITH-FM89A Q meter at frequency 2000 Hz. In measurement, it observed that compound has lower value (ε = 1580) below 36ºC, which rises upto a 5600 moder...

A fast and cost-effective technique is applied for fabricating cobalt and nickel nanopillars on aluminium substrates. By applying an electrochemical process, the aluminium oxide barrier layer is removed from the pore bottom tips of nanoporous anodic alumina templates. So, cobalt and nickel nanopillars are fabricated into these templates by DC electrodeposition. The resulting nanostructure remai...

Characterization was performed on the application of atomic layer deposition (ALD) of hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) of silicon nitride (Si3N4) as metal–insulator–metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The results show that the MIM capacitor with 62 nm of ALD HfO2 res...