This work shows a broadband, high-efficiency power amplifier (PA) monolithic microwave integrated circuit (MMIC) that uses InP-based metal-oxide-semiconductor (MOS) high-electron-mobility transistors (HEMTs) with an extended drain-side access region and broadband conjugate matching topology. Advanced device technologies, namely, double-side-doped structures, MOS gate asymmetric recess, were ado...

Record-low sheet-resistance of $ 128 O=sq have been obtained in two-dimensional electron gases at ultrathin single AlN/GaN heterojunctions by optimizing the metal fluxes used in molecular beam epitaxy growth. Multiple 2DEGs have been found in AlN/GaN superlattices, with the net electron density measured 4 1 Â 10 14 cm À2 at room temperature. This very high electron density also leads to a furth...

Contactless photo-electrochemical (CL-PEC) etching was used to fabricate recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). Self-termination of observed during CL-PEC on an AlGaN barrier layer whose residual thickness had a uniform value 6 nm overall the same chip. After tetramethylammonium hydroxide post-treatment, root-mean-square roughness etched surface around 0.4 nm, which...

We demonstrate two-dimensional simulations for design of AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) with gatelengths .,:; 150 nm with emphasis on power applications in the Ka-band and of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) . Besides the use of advanced interface and generation/recombination models the simulations yie ld the bias dependence of the small signa...

After the excellent performance achieved by normally-on AlGaN/GaN high electron mobility transistors (HEMTs), research focus has shifted to normallyoff structures. We explore the advantages offered by the recessed-gate technique using our two-dimensional device/circuit simulator Minimos-NT. Excellent agreement with experimental data is achieved, and theoretical AC performance for different rece...

Within the last five years material characterization through transmission electron microscopy (TEM) imaging has advanced to a point where identification of single defects is attainable. Novel capabilities of device structure characterization is demonstrated here. The degradation of AlGaN/GaN:Si HEMTs is investigated, defects identified and contamination elements localized.

The urgent need for renewable energy source has led to a significant interest in triboelectric nanogenerators (TENGs) as new technology. In contrast traditional polymer TENGs, semiconductor direct-current TENGs are more suitable miniaturization and integration with electronic devices. This study proposes friction material made of depletion mode GaN high electron mobility transistors (HEMTs), wh...

This article will review results concerning reliability of High Electron Mobility Transistors (HEMTs) based on GaN, which currently represent the technology choice for high efficiency microwave and millimeter-wave power amplifiers. Several failure mechanisms these devices have been extensively studied, including converse piezoelectric effects, formation conductive percolation paths at edge gate...

The basic active and passive elements for a 50 nm InGaAs-InAlAs-InP HEMT process with pseudomorphic InGaAs channel have been realized. The design and fabrication of 50 nm gate length InP HEMTs, MIM capacitors and thin film resistors have been studied. The integration of the components in a microstrip-based MMIC process has been proven by the successful demonstration of a wideband amplifier.