Superconductors are materials that lose all electrical resistance below a specific temperature, known as the critical temperature (Tc). Large-scale applications, for example, in superconducting cables, require materials with high (ideally room temperature) Tc’s, but most superconductors have very low Tc’s, typically a few kelvin or less. The discovery of a layered copper oxide (cuprate) with a ...

Here, we investigate the doping effects on the lithium ion transport behavior in garnet Li7La3Zr2O12 (LLZO) from the combined experimental and theoretical approach. The concentration of Li ion vacancy generated by the inclusion of aliovalent dopants such as Al(3+) plays a key role in stabilizing the cubic LLZO. However, it is found that the site preference of Al in 24d position hinders the thre...

Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al(0.83)Ga(0.17)N disorder alloy, using fi...

This work is mainly focused on an alternative method for emitter formation by means of boron diffusion from a boron-doped plasma-enhanced chemical vapor deposition (PECVD) doping source. With this approach only one high temperature process is necessary for emitter and BSF/FSF formation (co-diffusion), without depletion of surface doping concentration. This enables time and cost-efficient fabric...

This report describes the effects of impurity-co-doping on transparent conducting Al-doped ZnO (AZO) films prepared by DC magnetron sputtering using a target composed of dopant powder added to a mixture of ZnO and Al O powder. The chemical 2 3 stability of transparent conducting AZO films could be improved by co-doping Cr or Co without significantly altering the original electrical and optical ...

ZnO nanowires (NWs) are used as building blocks for a wide range of different devices, e.g. light emitters, resonators, and sensors. Integration of the NWs into such structures requires a high level of NWs' diameter control. Here, we present that the doping concentration of Zn x Al1-x O and Zn x Ga1-x O seed layers has a strong impact on the NW growth and allows to tune the diameter of the NWs ...