In this ISR the Proposal Instructions for the NICMOS Science Instrument are described. This report discusses the possible SI configurations, modes, and most of the optional parameters. The optional parameters which support the creation and association of patterns of exposures are discussed in a companion ISR (NICMOS-013).

David Ben-Nathan ([email protected]) Orly Gershoni-Yahalom ([email protected]) Itzchak Samina ([email protected]) Yevgeny Khinich ([email protected]) Israel Nur ([email protected]) Orgad Laub ([email protected]) Ahuva Gottreich ([email protected]) Michael Simanov ([email protected]) Angel Porgador ([email protected]) Bracha Rager-Zisman ([email protected]) Nadav Or (nadav@omri...

A large inhomogeneity of the minority lifetime from 1 to 10 µs at 77 K over area is observed in some experiments when high-quality HgCdTe layers electronic type conductivity are grown on GaAs substrates with a diameter 76.2 mm (013) orientation by method molecular beam epitaxy. As rule, such lifetimes determined carrier recombination Shockley-Hall-Read (SHR) centers. Modern studies and ideas ab...