نتایج جستجو برای: گشتل ge
تعداد نتایج: 19972 فیلتر نتایج به سال:
5 10 Teþ ions cm 2 were implanted in an Ge(001) substrate using an industrial implanter with a Teþ beam energy of 180 keV. In addition to usual implantation-mediated defects observed in Ge with usual dopants, Te implantations lead to the formation of amorphous surface GeO clusters exhibiting micrometer scale sizes, as well as deep extended defects. Implantation defects promote the formation of ...
Using a combination of genetic, biochemical, and structural approaches, we show that the cyclic-peptide antibiotic GE23077 (GE) binds directly to the bacterial RNA polymerase (RNAP) active-center 'i' and 'i+1' nucleotide binding sites, preventing the binding of initiating nucleotides, and thereby preventing transcription initiation. The target-based resistance spectrum for GE is unusually small...
UNLABELLED Following reactivation from latency, there are two distinct steps in the spread of herpes simplex virus (HSV) from infected neurons to epithelial cells: (i) anterograde axonal transport of virus particles from neuron bodies to axon tips and (ii) exocytosis and spread of extracellular virions across cell junctions into adjacent epithelial cells. The HSV heterodimeric glycoprotein gE/g...
Using enriched isotopes, we developed a method to elucidate the long-standing issue of Ge transport governing the strain-driven self-assembly. Here 76Ge was employed to form the 2D metastable layer on a Si(001) surface, while the 3D transition and growth were completed by additional evaporation of 70Ge. This isotope tracing combined with the analysis of the Ge-Ge LO phonon enables the tracking ...
The step-flow growth mode is used to fabricate Si and Ge nanowires with a width of 3.5 nm and a thickness of one atomic layer (0.3 nm) by self-assembly. Alternating deposition of Ge and Si results in the formation of a nanowire superlattice covering the whole surface. One atomic layer of Bi terminating the surface is used to distinguish between the elements Si and Ge. A difference in apparent h...
We carry out a comparative study of the energetics and dynamics of Si-Si, Ge-Ge, and Ge-Si ad-dimers on top of a dimer row in the Si(001) surface, using first-principles calculations. The dynamic appearance of a Ge-Si dimer is distinctively different from that of a Si-Si or Ge-Ge dimer, providing a unique way for its identification by scanning tunneling microscopy (STM). Its "rocking" motion, o...
this research was investigated to analyze genotype × environment (ge) interaction for grain yield in durum wheat multi-environment trials (met) conducted in dryland agricultural research stations (dari) using gge (g + ge interaction) biplot methodology and joint regression analysis (b + s2di). the environment, ge interaction and genotype effects were accounted for 84%, 7.7% and 2.3% of total s...
GE37468 A is a novel antibiotic produced by Streptomyces sp. ATCC 55365. It has molecular mass 1309.48 and formula C59H52O12N14S5 and belongs to the thiazolyl peptide group of antibiotics. The structure was elucidated by 1H and 13C NMR and MS studies on intact molecule and its hydrolysis products. The antibiotic is a highly modified peptide containing a macrocycle and a side chain composed of a...
The Stranski-Krastanov growth of Ge islands on Si(001) has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electr...
کاربنها حدواسطه های خیلی فعالی بوده که بسیار مورد توجه شیمیدانان قرار گرفته اند. در این تحقیق ابتدا محاسبه کوانتمی انرژی یکتایی و سه تایی کاربنهای سه عضوی شامل ساختارهای:الف) ,c2h2mب) ,c2h4mپ) c2h6m که(m=si, ge, sn ,pb) صورت گرفت. سپس محاسبه کوانتمی انرژی یکتایی و سه تایی کاربنهای چهار عضوی شامل ساختارهای:ت) ,c3h4m.ج) c3h6mانجام گرفت.و در آخر مقایسه بین سیستم حلقوی سه عضویی و چهار عضویی وسیستم ...
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